論文

査読有り
2014年

III-V-N Compounds for Multi-Junction Solar Cells on Si

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)
  • Keisuke Yamane
  • ,
  • Noriyuki Urakami
  • ,
  • Hiroto Sekiguchi
  • ,
  • Akihiro Wakahara

開始ページ
2792
終了ページ
2796
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1109/PVSC.2014.6925509
出版者・発行元
IEEE

We proposed a GaPN/GaAsPN/Si multi-junction solar cell in which lattice constants for all layers matched to Si bottom cell. Initial growth of GaP layer on Si is an important role to suppress the anti-phase domain, stacking faults, threading dislocations and melt-back etching. According to theoretical estimation considering the strain effect, band-gap energy about 1.65 eV can be obtained by GaAs0.2P0.74N0.06 which satisfies the lattice-matching condition to Si. In order to clarify the possibility of this material system, we grew GaPN and GaAsPN on the structural defect-free GaP/Si template by using rf-MBE. We also investigated the pinning state at the GaP(N)/Si heterointerface to design a low-loss tunneling junction.

Web of Science ® 被引用回数 : 2

リンク情報
DOI
https://doi.org/10.1109/PVSC.2014.6925509
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000366638903009&DestApp=WOS_CPL

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