論文

査読有り
2013年9月

Growth of dilute BGaP alloys by molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH
  • N. Urakami
  • ,
  • F. Fukami
  • ,
  • H. Sekiguchi
  • ,
  • H. Okada
  • ,
  • A. Wakahara

378
開始ページ
96
終了ページ
99
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.jcrysgro.2012.12.115
出版者・発行元
ELSEVIER SCIENCE BV

Crystal growth of dilute BGaP alloys by solid-source molecular-beam epitaxy (MBE) equipped with electron beam evaporation system as the B source is investigated with changing growth condition of the growth temperature and the V/III ratio. The B composition for BGaP alloys increases with decrease of growth temperature and increase of III/V ratio.
The B incorporation into the GaP matrix is difficult compared to other group-III atoms (Al or In) incorporations due to bonds in the matrix are highly strained calculated by valence force-field model. The possibilities of forming and conserving B-P bonds opportunity increased with decrease of growth temperature and increase of the V/III ratio. (c) 2013 Elsevier B.V. All rights reserved.

Web of Science ® 被引用回数 : 2

リンク情報
DOI
https://doi.org/10.1016/j.jcrysgro.2012.12.115
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000323355900026&DestApp=WOS_CPL

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