論文

査読有り
2011年

Annealing behavior on luminescence properties of self-assembled InGaAsN/GaP quantum dots

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2
  • N. Urakami
  • ,
  • K. Umeno
  • ,
  • Y. Furukawa
  • ,
  • F. Fukami
  • ,
  • S. Mitsuyoshi
  • ,
  • H. Okada
  • ,
  • H. Yonezu
  • ,
  • A. Wakahara

8
2
開始ページ
263-265
終了ページ
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1002/pssc.201000525
出版者・発行元
WILEY-V C H VERLAG GMBH

Self assembled In0.6Ga0.4AsN/GaP quantum dots (QDs) were grown by solid source molecular beam epitaxy (SSMBE). Structural and optical properties of as-grown and annealed In0.6Ga0.4AsN/GaP QDs were investigated. Cross sectional high-resolution transmission electron microscopy (HR-TEM) study did not show any structural defects and N-related chain structures. The integrated PL intensity at 725 degrees C rapid thermal annealing (RTA) for sample prepared at RF power of 390 W was obtained 3.7 times higher than the as-grown sample measured at 18 K. The blueshifts of similar to 0.35 and similar to 0.55 meV/degrees C were observed annealed up to 725 and 800 degrees C, respectively as compare to as-grown samples. Average QD height was reduced from 5 to 3 nm, which may be due to interdiffusion of In and Ga atoms. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Web of Science ® 被引用回数 : 3

リンク情報
DOI
https://doi.org/10.1002/pssc.201000525
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000301533800007&DestApp=WOS_CPL

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