2011年
Annealing behavior on luminescence properties of self-assembled InGaAsN/GaP quantum dots
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2
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- 巻
- 8
- 号
- 2
- 開始ページ
- 263-265
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1002/pssc.201000525
- 出版者・発行元
- WILEY-V C H VERLAG GMBH
Self assembled In0.6Ga0.4AsN/GaP quantum dots (QDs) were grown by solid source molecular beam epitaxy (SSMBE). Structural and optical properties of as-grown and annealed In0.6Ga0.4AsN/GaP QDs were investigated. Cross sectional high-resolution transmission electron microscopy (HR-TEM) study did not show any structural defects and N-related chain structures. The integrated PL intensity at 725 degrees C rapid thermal annealing (RTA) for sample prepared at RF power of 390 W was obtained 3.7 times higher than the as-grown sample measured at 18 K. The blueshifts of similar to 0.35 and similar to 0.55 meV/degrees C were observed annealed up to 725 and 800 degrees C, respectively as compare to as-grown samples. Average QD height was reduced from 5 to 3 nm, which may be due to interdiffusion of In and Ga atoms. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- リンク情報
- ID情報
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- DOI : 10.1002/pssc.201000525
- ISSN : 1862-6351
- Web of Science ID : WOS:000301533800007