論文

査読有り
2011年

Analysis of quantum levels for self-assembled InGaAsN/GaP quantum dots

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2
  • F. Fukami
  • ,
  • K. Umeno
  • ,
  • Y. Furukawa
  • ,
  • N. Urakami
  • ,
  • S. Mitsuyoshi
  • ,
  • H. Okada
  • ,
  • H. Yonezu
  • ,
  • A. Wakahara

8
2
開始ページ
322-324
終了ページ
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1002/pssc.201000500
出版者・発行元
WILEY-V C H VERLAG GMBH

We develop the design method of luminescence device with the strained quantum dots (QDs) on Si using a theoretical analysis on realistic structure. We have calculated numerically the first electron and heavy-hole quantum levels of self-assembled InGaAsN/GaP QDs using the finite element method, the model-solid theory and the band-anticrossing model. The calculation results indicate that N incorporation into InGaAs QDs drastically reduces the conduction band minimum (similar to 120 meV/N at%), and that it is shown enough energy difference between the first electron-quantum level and GaP X-state when N composition is 1 similar to 2%. For self-assembled In0.5Ga0.5As0.99N0.01/GaP QDs, the calculated transition energy at room temperature (RT) nearly matches with the measured photoluminescence (PL) peak energy. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Web of Science ® 被引用回数 : 11

リンク情報
DOI
https://doi.org/10.1002/pssc.201000500
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000301533800026&DestApp=WOS_CPL

エクスポート
BibTeX RIS