2011
Analysis of quantum levels for self-assembled InGaAsN/GaP quantum dots
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- Volume
- 8
- Number
- 2
- First page
- 322-324
- Last page
- Language
- English
- Publishing type
- Research paper (international conference proceedings)
- DOI
- 10.1002/pssc.201000500
- Publisher
- WILEY-V C H VERLAG GMBH
We develop the design method of luminescence device with the strained quantum dots (QDs) on Si using a theoretical analysis on realistic structure. We have calculated numerically the first electron and heavy-hole quantum levels of self-assembled InGaAsN/GaP QDs using the finite element method, the model-solid theory and the band-anticrossing model. The calculation results indicate that N incorporation into InGaAs QDs drastically reduces the conduction band minimum (similar to 120 meV/N at%), and that it is shown enough energy difference between the first electron-quantum level and GaP X-state when N composition is 1 similar to 2%. For self-assembled In0.5Ga0.5As0.99N0.01/GaP QDs, the calculated transition energy at room temperature (RT) nearly matches with the measured photoluminescence (PL) peak energy. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Link information
- ID information
-
- DOI : 10.1002/pssc.201000500
- ISSN : 1862-6351
- Web of Science ID : WOS:000301533800026