論文

査読有り
2010年

Electrical and luminescence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10
  • S. Mitsuyoshi
  • ,
  • K. Umeno
  • ,
  • Y. Furukawa
  • ,
  • N. Urakami
  • ,
  • A. Wakahara
  • ,
  • H. Yonezu

7
10
開始ページ
2498-2501
終了ページ
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1002/pssc.200983851
出版者・発行元
WILEY-V C H VERLAG GMBH

We have demonstrated the acceptor concentration control for p-type GaPN grown by molecular beam epitaxy (MBE) using Mg as the acceptor element. The hole concentration increases up to 2x10(19) cm(-3) at 300 K and does not remarkably vary after thermal treatment and thus Mg is successfully doped into GaPN. Subsequently, we have investigated the electrical and luminescence properties of Mg-doped p-type GaPN grown by MBE. The activation energy is estimated to be about 37 meV, indicating Mg is a shallow acceptor element for p-type GaPN grown by MBE. When the hole concentration is larger than similar to 10(18) cm(-3), the photoluminescence (PL) intensity decreases with increasing the hole concentration. By time-resolved PL (TRPL) measurement, this PL quenching is caused by the non-radiative centres due to Mg doping when the hole concentration is larger than similar to 10(18) cm(-3). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Web of Science ® 被引用回数 : 4

リンク情報
DOI
https://doi.org/10.1002/pssc.200983851
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000301542300036&DestApp=WOS_CPL

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