論文

査読有り
2010年9月

Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
  • K. Umeno
  • ,
  • Y. Furukawa
  • ,
  • N. Urakami
  • ,
  • R. Noma
  • ,
  • S. Mitsuyoshi
  • ,
  • A. Wakahara
  • ,
  • H. Yonezu

42
10
開始ページ
2772
終了ページ
2776
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.physe.2009.11.014
出版者・発行元
ELSEVIER SCIENCE BV

We have grown self-assembled InGaAsN/GaP quantum dots (QDs) with an In composition of 50% via the Stranski-Krastanov growth mode of molecular-beam epitaxy, obtaining high-density InGaAsN islands of 8 x 10(10) cm(-2). When the InGaAsN islands are directly exposed to the P(2) beam, we observe a quantum-well-like hetero-interface using cross-sectional transmission electron microscopy (XTEM). This result indicates that the InGaAsN island density is remarkably reduced by As/P exchange reactions. To suppress these exchange reactions, we deposit Ga corresponding to 1 monolayer on the InGaAsN islands. When the Ga deposition sequence is finished, we use XTEM to detect InGaAsN islands embedded in GaP, which indicates that As/P exchange reactions can be suppressed by Ga deposition. Subsequently, we grow a multiple-stacked InGaAsN/GaP 5QDs using the Ga deposition sequence and report their room-temperature photoluminescence spectra. (C) 2009 Elsevier B.V. All rights reserved.

Web of Science ® 被引用回数 : 9

リンク情報
DOI
https://doi.org/10.1016/j.physe.2009.11.014
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000284723200075&DestApp=WOS_CPL

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