論文

査読有り
2010年1月

Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE

JOURNAL OF CRYSTAL GROWTH
  • K. Umeno
  • ,
  • Y. Furukawa
  • ,
  • N. Urakami
  • ,
  • S. Mitsuyoshi
  • ,
  • H. Yonezu
  • ,
  • A. Wakahara

312
2
開始ページ
231
終了ページ
237
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.jcrysgro.2009.10.012
出版者・発行元
ELSEVIER SCIENCE BV

We have demonstrated that Mg is a controllable acceptor element for p-type GaAsN alloys grown by solid-source molecular-beam epitaxy (MBE), where a hole concentration has been realized up to 1.5 x 10(20) cm(-3) and has been controlled along the vapor pressure curve of Mg using a standard effusion cell. In addition, electrical and luminescence characterizations have been investigated for GaAsN:Mg samples grown by solid-source MBE. The activation energy of Mg for the GaAsN:Mg samples is close to the impurity energy of Mg in GaAs (28 meV). Thus Mg is a very shallow acceptor element for GaAsN alloys. From photoluminescence (PL) measurements, the integrated PL intensity drastically increases with increasing a hole concentration up to 8.6 x 10(19) cm(-3) at 300 K. This result suggests that the hole concentration can increase up to 8.6 x 10(19) cm(-3) without significantly increasing the non-radiative recombination centers related to Mg doping when Mg is the acceptor element. (C) 2009 Elsevier B.V. All rights reserved.

Web of Science ® 被引用回数 : 4

リンク情報
DOI
https://doi.org/10.1016/j.jcrysgro.2009.10.012
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000274220400014&DestApp=WOS_CPL

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