論文

査読有り
2009年

Crossover between Mott-insulator and band-insulator in the two-orbital Hubbard model

25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4
  • Satoru Odashima

150
開始ページ
042145/1-4
終了ページ
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1088/1742-6596/150/4/042145
出版者・発行元
IOP PUBLISHING LTD

Electronic states of the two-orbital Hubbard model are investigated by means of the composite operator method. In addition to the transfer within the same kind of orbital, we introduce the off-diagonal transfer t', which provides the mixing of orbitals. In the t' = 0 case, the system shows the orbital selective Mott transition at U = 4. Upon adding t', the band gap goes wider. This increase of the gap originates from the crossover between the Mott-insulator and the band-insulator.

リンク情報
DOI
https://doi.org/10.1088/1742-6596/150/4/042145
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000289891200145&DestApp=WOS_CPL
ID情報
  • DOI : 10.1088/1742-6596/150/4/042145
  • ISSN : 1742-6588
  • Web of Science ID : WOS:000289891200145

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