2009年
Crossover between Mott-insulator and band-insulator in the two-orbital Hubbard model
25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4
- 巻
- 150
- 号
- 開始ページ
- 042145/1-4
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1088/1742-6596/150/4/042145
- 出版者・発行元
- IOP PUBLISHING LTD
Electronic states of the two-orbital Hubbard model are investigated by means of the composite operator method. In addition to the transfer within the same kind of orbital, we introduce the off-diagonal transfer t', which provides the mixing of orbitals. In the t' = 0 case, the system shows the orbital selective Mott transition at U = 4. Upon adding t', the band gap goes wider. This increase of the gap originates from the crossover between the Mott-insulator and the band-insulator.
- リンク情報
- ID情報
-
- DOI : 10.1088/1742-6596/150/4/042145
- ISSN : 1742-6588
- Web of Science ID : WOS:000289891200145