Ogura Atusi

J-GLOBAL         Last updated: Jun 28, 2019 at 18:00
 
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Name
Ogura Atusi
Affiliation
Meiji University
Section
School of Science and Technology
Job title
Professor

Published Papers

 
Ishikawa Yoichiro, Tajima Michio, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   58(7)    Jul 2019   [Refereed]
Kobayashi Hiroto, Yokogawa Ryo, Kinoshita Kosuke, Numasawa Yohichiroh, Ogura Atsushi, Nishizawa Shin-ichi, Saraya Takuya, Ito Kazuo, Takakura Toshihiko, Suzuki Shin-ichi, Fukui Munetoshi, Takeuchi Kiyoshi, Hiramoto Toshiro
JAPANESE JOURNAL OF APPLIED PHYSICS   58    Apr 2019   [Refereed]
Kota Tatejima, Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Setsu Suzuki, Atsushi Ogura, Toyohiro Chikyow
Japanese Journal of Applied Physics   58    Jan 2019   [Refereed]
© 2019 The Japan Society of Applied Physics. The growth conditions of MnS thin film on a Si (100) substrate deposited by the RF-magnetron sputtering method were investigated. The MnS is a buffer layer for the epitaxial growth of non-polar AlN thin...
Onishi Kohei, Kinoshita Kosuke, Kojima Takuto, Ohshita Yoshio, Ogura Atsushi
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   8(4) Q72-Q75   May 2019   [Refereed]
Kinoshita Kosuke, Kojima Takuto, Onishi Kohei, Ohshita Yoshio, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   58    Apr 2019   [Refereed]
T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto
Technical Digest - International Electron Devices Meeting, IEDM   2018-December    Jan 2019
© 2018 IEEE. Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off...
Kurata Takako, Uchino Kiyoko, Hotta Chiemi, Ogura Atsushi, Miyoshi Tatsuya, Ogawa Tomoko, Kanbayashi Daiki, Tanaka Tomoyuki, Yumisashi Takahiro, Komano Jun
MICROBIOLOGY AND IMMUNOLOGY   63(1) 32-35   Jan 2019   [Refereed]
K. Kakushima, T. Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai
IEEE Symposium on VLSI Circuits, Digest of Technical Papers   2018-June 105-106   Oct 2018
© 2018 IEEE. A new methodology to evaluate the process temperature dependence of the minority carrier lifetime has been developed. A TEG layout with p+-stripes on an n-Si substrate was designed. When all the p+n junctions are made forward, the min...
Yokogawa Ryo, Takeuchi Kazuma, Murakami Tatsumi, Usuda Koji, Yonenaga Ichiro, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   57(10)    Oct 2018   [Refereed]
Suzuki Takahiro, Yokogawa Ryo, Oasa Kohei, Nishiwaki Tatsuya, Hamamoto Takeshi, Ogura Atsushi
JOURNAL OF ELECTRONIC MATERIALS   47(9) 5050-5055   Sep 2018   [Refereed]
Tajima Michio, Kiuchi Hirotatsu, Higuchi Fumito, Ishikawa Yoichiro, Ogura Atsushi
JOURNAL OF ELECTRONIC MATERIALS   47(9) 5056-5060   Sep 2018   [Refereed]
Kinoshita Kosuke, Kojima Takuto, Kobayashi Hiroto, Ohshita Yoshio, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   57(8)    Aug 2018   [Refereed]
Ishikawa Yoichiro, Tajima Michio, Kiuchi Hirotatsu, Ogura Atsushi, Miyamura Yoshiji, Harada Hirofumi, Kakimoto Koichi
JAPANESE JOURNAL OF APPLIED PHYSICS   57(8)    Aug 2018   [Refereed]
Nakayama Ryohei, Kojima Takuto, Ogura Atsushi, Kutsukake Kentaro
JAPANESE JOURNAL OF APPLIED PHYSICS   57(8)    Aug 2018   [Refereed]
Hiyama Takuya, Kojima Takuto, Kinoshita Kosuke, Nishihara Tappei, Onishi Kohei, Muramatsu Kazuo, Tanaka Aki, Ohshita Yoshio, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   57(8)    Aug 2018   [Refereed]
Hotta Yasushi, Kawayama Iwao, Miyake Shozo, Saiki Ikuya, Nishi Shintaro, Yamahara Kota, Arafune Koji, Yoshida Haruhiko, Satoh Shin-ichi, Sawamoto Naomi, Ogura Atsushi, Ito Akira, Nakanishi Hidetoshi, Tonouchi Masayoshi, Tabata Hitoshi
APPLIED PHYSICS LETTERS   113(1)    Jul 2018   [Refereed]
Matsuura Kentaro, Ohashi Takumi, Muneta Iriya, Ishihara Seiya, Kakushima Kuniyuki, Tsutsui Kazuo, Ogura Atsushi, Wakabayashi Hitoshi
JOURNAL OF ELECTRONIC MATERIALS   47(7) 3497-3501   Jul 2018   [Refereed]
Onaya Takashi, Nabatame Toshihide, Sawada Tomomi, Kurishima Kazunori, Sawamoto Naomi, Ohi Akihiko, Chikyow Toyohiro, Ogura Atsushi
THIN SOLID FILMS   655 48-53   Jun 2018   [Refereed]
Hibino Yusuke, Ishihara Seiya, Sawamoto Naomi, Ohashi Takumi, Matsuura Kentarou, Machida Hideaki, Ishikawa Masato, Sudoh Hiroshi, Wakabayashi Hitoshi, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   57(6)    Jun 2018   [Refereed]
Zhan Tianzhuo, Yamato Ryo, Hashimoto Shuichiro, Tomita Motohiro, Oba Shunsuke, Himeda Yuya, Mesaki Kohei, Takezawa Hiroki, Yokogawa Ryo, Xu Yibin, Matsukawa Takashi, Ogura Atsushi, Kamakura Yoshinari, Watanabe Takanobu
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   19(1) 443-453   May 2018   [Refereed]
Kinoshita Kosuke, Kojima Takuto, Suzuki Ryota, Kawatsu Tomoyuki, Nakamura Kyotaro, Ohshita Yoshio, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   57(5)    May 2018   [Refereed]
Tajima Michio, Ishikawa Yoichiro, Kiuchi Hirotatsu, Ogura Atsushi
APPLIED PHYSICS EXPRESS   11(4)    Apr 2018   [Refereed]
Nagata Takahiro, Suzuki Yoshihisa, Yamashita Yoshiyuki, Ogura Atsushi, Chikyow Toyohiro
JAPANESE JOURNAL OF APPLIED PHYSICS   57(4)    Apr 2018   [Refereed]
Zakaria Mohamed Barakat, Nagata Takahiro, Matsuda Asahiko, Yasuhara Yudai, Ogura Atsushi, Hossain Md. Shahriar A., Billah Motasim, Yamauchi Yusuke, Chikyow Toyohiro
ACS APPLIED NANO MATERIALS   1(2) 915-921   Feb 2018   [Refereed]
K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai
Proceedings of International Conference on ASIC   2017-October 1137-1140   Jan 2018
© 2017 IEEE. Three dimensionally (3D) scaled IGBTs that have a scaling factor of 3 (k=3) with respect to current commercial products (k=1) were fabricated for the first time. The scaling was applied to the lateral and vertical dimensions as well a...
K. Yoshioka, R. Yokogawa, T. Murakami, S. Komago, N. Sawamoto, A. Ogura
ECS Transactions   86 419-425   Jan 2018
© 2018 ECS Transactions. All rights reserved. Carbon-doped silicon (Si:C) is used as a stressor to the channel of n-type metal oxide semiconductor field-effect-transistor (MOSFET). In this study, we determined PDPs, phonon deformation potentials, ...
Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
ECS Transactions   86(11) 135-145   Jan 2018   [Refereed]
© 2018 Electrochemical Society Inc.All rights reserved. We investigated threshold voltage shift (ΔVth ) of Al2O3 insulator/In-Si-O-C thin-film transistors (TFTs) with and without an Al2O3 passivation layer under the negative gate bias stress (NBS)...
S. Komago, T. Murakami, K. Yoshioka, R. Yokogawa, J. O. Borland, T. Kuroi, T. Tabata, K. Huet, N. Horiguchi, A. Ogura
ECS Transactions   86 59-65   Jan 2018
© 2018 ECS Transactions. All rights reserved. SiGe channel is widely used because carrier mobilities of SiGe are higher than those of Si. C or Ge ion implantation in the source/drain region is expected to be effective to induce tensile or compress...
Y. Takahashi, R. Yokogawa, T. Murakami, I. Hirosawa, K. Suda, A. Ogura
ECS Transactions   86 329-336   Jan 2018
© 2018 ECS Transactions. All rights reserved. We evaluated the anisotropic three-dimensional strain relaxation in the patterned Gei-xSnx mesa structure by Raman spectroscopy and X-ray diffraction (XRD). The strain states in the channel region chan...
R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, A. Ogura
ECS Transactions   86 87-93   Jan 2018
© 2018 ECS Transactions. All rights reserved. To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG latera...
K. Usuda, M. Yoshiki, K. Suda, A. Ogura, M. Tomita
ECS Transactions   86 411-418   Jan 2018
© 2018 ECS Transactions. All rights reserved. We demonstrate a GeSn growth method that uses new source gases to increase the Sn concentration of GeSn thin films, which are attracting attention as a next-generation semiconductor material for replac...
T. Onaya, T. Nabatame, N. Sawamoto, K. Kurishima, A. Ohi, N. Ikeda, T. Nagata, A. Ogura
ECS Transactions   86 31-38   Jan 2018
© The Electrochemical Society. We studied the ferroelectricity and the leakage current (J) properties of two types of the MFM capacitors such as the TiN/ZrO 2 /Hf x Zr 1-x O 2 /ZrO 2 /TiN capacitor (D-ZrO 2 ) with the ZrO 2 nucleation layers, com...
Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
IEEE Journal of the Electron Devices Society   6 1251-1257   Jan 2018
© 2018 IEEE. We have fabricated large area integrated top-gate n MISFETs with sputter-deposited-MoS 2 film having n-type operation. A sputtering method enables us to form a large-area MoS 2 thin film followed by H 2 S annealing to compensate sulf...
Takayuki Aoyama, Mari Aoki, Isao Sumita, Atsushi Ogura
AIMS Materials Science   5 614-623   Jan 2018
© 2018 the Author(s). Silver paste, which mainly consists of silver metal, glass frit, and organics, has been used for contacting n+ emitter of conventional p-type solar cells, whereas aluminum-added silver paste (silver/aluminum paste) has been u...
Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudo, H. Wakabayashi, A. Ogura
MRS Advances   3 321-326   Jan 2018
Copyright © Materials Research Society 2018. We report the investigation on the properties of a novel Te precursor (i-C3H7)2Te and its effectiveness in fabricating MoTe2. The vapor pressure of the precursor was obtained by measuring the pressure a...
S. Ishihara, Y. Hibino, N. Sawamoto, H. Machida, H. Wakabayashi, A. Ogura
MRS Advances   3 379-384   Jan 2018
Copyright © Materials Research Society 2018. Metal organic precursor has a sufficiently high vapor pressure at low temperature, contributing high-speed low-temperature MOCVD-MoS2 film formation. We fabricated monolayer MoS2 by 1 step cold-wall MOC...
Potential of Chemical Rounding for the Performance Enhancement of a Monolithic Perovskite/Bifacial N-PERT Si Tandem Cell
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)   2039-2044   2018   [Refereed]
Evaluation of lifetime degradation caused by oxygen precipitation combined with metal contamination in Cz-Si for solar cells
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)   0360-0362   2018   [Refereed]
Effect of ITO Capping Layer on Interface Workfunction of MoOx in ITO/MoOx/SiO2/Si Contacts
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)   2024-2026   2018   [Refereed]
Yamazaki Hideyuki, Koike Mitsuo, Saitoh Masumi, Tomita Mitsuhiro, Yokogawa Ryo, Sawamoto Naomi, Tomita Motohiro, Kosemura Daisuke, Ogura Atsushi
SCIENTIFIC REPORTS   7    Nov 2017   [Refereed]
Sawada Tomomi, Nabatame Toshihide, Dao Thang Duy, Yamamoto Ippei, Kurishima Kazunori, Onaya Takashi, Ohi Akihiko, Ito Kazuhiro, Takahashi Makoto, Kohama Kazuyuki, Ohishi Tomoji, Ogura Atsushi, Nagao Tadaaki
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   35(6)    Nov 2017   [Refereed]
Takeuchi Kazuma, Yokogawa Ryo, Ishihara Seiya, Yamamoto Shotaro, Konoshima Shiori, Sawano Kentarou, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   56(11)    Nov 2017   [Refereed]
Hashimoto Shuichiro, Yokogawa Ryo, Oba Shunsuke, Asada Shuhei, Xu Taiyu, Tomita Motohiro, Ogura Atsushi, Matsukawa Takashi, Masahara Meishoku, Watanabe Takanobu
JOURNAL OF APPLIED PHYSICS   122(14)    Oct 2017   [Refereed]
Aoyama Takayuki, Aoki Mari, Sumita Isao, Yoshino Yasushi, Ohshita Yoshio, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   56(10)    Oct 2017   [Refereed]
Aoyama Takayuki, Aoki Mari, Sumita Isao, Yoshino Yasushi, Ogura Atsushi
IEEE JOURNAL OF PHOTOVOLTAICS   7(5) 1313-1318   Sep 2017   [Refereed]
Onaya Takashi, Nabatame Toshihide, Sawamoto Naomi, Ohi Akihiko, Ikeda Naoki, Chikyow Toyohiro, Ogura Atsushi
APPLIED PHYSICS EXPRESS   10(8)    Aug 2017   [Refereed]
Hibino Yusuke, Ishihara Seiya, Sawamoto Naomi, Ohashi Takumi, Matsuura Kentarou, Machida Hideaki, Wakabayashi Hitoshi, Ogura Atsushi
JOURNAL OF MATERIALS RESEARCH   32(16) 3021-3028   Aug 2017   [Refereed]
Kiuchi Hirotatsu, Tajima Michio, Higuchi Fumito, Ogura Atsushi, Iida Nobuhito, Tachibana Shoji, Masada Isao, Nishijima Eiichi
JAPANESE JOURNAL OF APPLIED PHYSICS   56(7)    Jul 2017   [Refereed]
Higuchi Fumito, Tajima Michio, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   56(7)    Jul 2017   [Refereed]
Suda Kohei, Sawamoto Naomi, Machida Hideaki, Ishikawa Masato, Sudoh Hiroshi, Ohshita Yoshio, Hirosawa Ichiro, Ogura Atsushi
JOURNAL OF CRYSTAL GROWTH   468 605-609   Jun 2017   [Refereed]

Books etc

 
Stress at the interface in SOI structure no.
Inspec publication   1998   
SIMOX
Editted by Maria J.Anc (Part:Joint Work)
The Institute of Electrical Engineers   2004   
Advanced Aspects of Spectroscopy
ed. by Muhammad Akhyar Farrukh (Part:Joint Work)
InTech, Croatia   Aug 2012   ISBN:978-953-51-0715-6

Conference Activities & Talks

 
Ki Hyun Jang, Takuya Saraya, Masaharu Kobayashi, Naomi Sawamoto, Atsushi Ogura, Toshiro Hiramoto
2017 Silicon Nanoelectronics Workshop, SNW 2017   29 Dec 2017   
© 2017 JSAP. The polycrystalline silicon (poly-Si) gate-all-around (GAA) nanowire transistors with 10nm scale width were fabricated under precise width control. The nanowire width is 10nm scale. Measured characteristics show smaller threshold volt...
Kan Hua Lee, Kyotaro Nakamura, Takefumi Kamioka, Nobuaki Kojima, Hyunju Lee, Li Wang, Kenji Araki, Yoshio Ohshita, Atsushi Ogura, Masafumi Yamaguchi
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017   1 Jan 2017   
© 2017 IEEE. We present the measurement results and analyses of a InGaP/GaAs//Si mechanical stack four-terminal solar cell. From these results, we performed detailed discussions of the loss mechanisms and efficiency limits of InGaP/GaAs//Si mechan...
Mari Aoki, Takayuki Aoyama, Isao Sumita, Yasushi Yoshino, Atsushi Ogura, Yoshio Ohshita
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017   1 Jan 2017   
© 2017 IEEE. Conductive paste degrades the solar cell performance due to the metallization. Silver crystallites at the interface may shunt the p-n junction, which degrades the cell performance. Besides, it is conceivable that glass frit itself sho...
Takayuki Aoyama, Mari Aoki, Isao Sumita, Yasushi Yoshino, Atsushi Ogura
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017   1 Jan 2017   
© 2017 IEEE. N-type crystalline silicon can be expected to achieve high-efficiency compared with p-type one. For the n-type solar cells, silver/aluminum paste has been used as metallization for p + emitter, which induces loss in open circuit volt...
T. Hiyama, T. Kojima, Y. Yamashita, A. Ogura
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017   1 Jan 2017   
© 2017 IEEE. We investigated the SiNx passivation with post-and pre- plasma treatment for crystalline Si solar cell. The lifetime was improved by the plasma treatment in the N 2 or N 2 /NH 3 atmosphere after SiNx deposition. From the depth profil...