論文

2010年

Semiconductor laser oscillation-frequency stabilization using the Faraday effect

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XVIII
  • Hideaki Arai
  • ,
  • Akira Sato
  • ,
  • Ayumi Sato
  • ,
  • Kenji Nakano
  • ,
  • Takashi Sato
  • ,
  • Masashi Ohkawa

7597
開始ページ
75971D
終了ページ
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1117/12.841526
出版者・発行元
SPIE-INT SOC OPTICAL ENGINEERING

The semiconductor lasers in use today are on one hand, prized, and highly praised, for their small size, light weight, longevity and energy-efficiency, -and on the other, criticized for their susceptibility to frequency-fluctuations brought about by changes in temperature and driving current. Once this "wrinkle" is ironed out, semiconductor lasers will become the default light-sources, for satellites' onboard interferometers. Our studies have been directed at stabilizing oscillation frequency to the atomic absorption line, and using negative electrical feedback to the injection current. Frequency stabilization is accomplished, by either; a) applying direct modulation to the semiconductor laser's driving current, or b) modulating the reference frequency, to obtain the error signal needed for stabilization. In this instance, Faraday effect-based stabilization was used. This indirect oscillation frequency stabilization has no discernable effect on spectra width, but, stability was no better than that observed in the system using the direct modulation.
When we compared Faraday effect-and direct modulation-based methods of stabilization, in order to uncover the root-cause of the discrepancy, sensors picked up system noise, the source of which was heat generated by the heavy current applied to a magnetic coil used to apply the Faraday effect. We also substituted a permanent magnet for the electromagnet.

リンク情報
DOI
https://doi.org/10.1117/12.841526
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000284994900029&DestApp=WOS_CPL
ID情報
  • DOI : 10.1117/12.841526
  • ISSN : 0277-786X
  • Web of Science ID : WOS:000284994900029

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