Toshiyuki Oishi

J-GLOBAL         Last updated: Sep 23, 2019 at 10:58
 
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Name
Toshiyuki Oishi
Nickname
Toshiyuki Oishi
E-mail
oishi104cc.saga-u.ac.jp
Affiliation
Saga University
Section
Faculty of Science and Engineering

Research Areas

 
 

Academic & Professional Experience

 
Mar 2014
 - 
Today
Department of Electrical and Electronic Engineering, Saga university
 
Apr 1986
 - 
Mar 2014
Mitsubishi Electric Corporation
 

Education

 
Apr 1984
 - 
Mar 1986
Electrical Engineering, Faculty of Engineerig, Kyoto university
 
Apr 1980
 - 
Mar 1984
Electrical Engineering, Graduate School of Engineerigng, Kyoto University
 

Published Papers

 
Toshiyuki Oishi, Kosuke Urata, Makoto Hashikawa, Kosuke Ajiro, Takayoshi Oshima
IEEE Electron Device Letters   1   Sep 2019   [Refereed]
Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu and Naoteru Shigekawa
Applied Physics Express   12 016501   Jan 2019   [Refereed]
T. Oshima, M. Hashikawa, S. Tomizawa, K. Miki, T. Oishi, K. Sasaki, and A. Kuramata
Applied Physics Express   11 112202   Oct 2018   [Refereed]
Takayoshi Oshima, Akihiro Hashiguchi, Tomoya Moribayashi, Kimiyoshi Koshi, Kimiyoshi Koshi, Kohei Sasaki, Kohei Sasaki, Akito Kuramata, Akito Kuramata, Osamu Ueda, Toshiyuki Oishi, Makoto Kasu
Japanese Journal of Applied Physics   56(8)    Aug 2017   [Refereed]
© 2017 The Japan Society of Applied Physics. The electrical properties of Schottky barrier diodes (SBDs) on a (001) β-Ga2O3 substrate were characterized and correlated with wet etchingrevealed crystal defects below the corresponding Schottky conta...
Takayoshi Oshima, Yuji Kato, Naoto Kawano, Akito Kuramata, Akito Kuramata, Shigenobu Yamakoshi, Shigenobu Yamakoshi, Shizuo Fujita, Toshiyuki Oishi, Makoto Kasu
Applied Physics Express   10(3)    Mar 2017   [Refereed]
© 2017 The Japan Society of Applied Physics. A β-(AlxGa1-x)2O3:Si/Ga2O3modulation-doped structure was fabricated by direct β-(AlxGa1-x)2O3epitaxial growth on a (010) β-Ga2O3substrate. Si on the order of 1018cm-3from adsorbed contaminants on the su...
Toshiyuki Oishi, Naoto Kawano, Satoshi Masuya, Makoto Kasu
IEEE Electron Device Letters   38(1) 87-90   Jan 2017   [Refereed]
© 1980-2012 IEEE. A novel diamond Schottky barrier diode (SBD) with H-terminated surface exposed to NO2gas is fabricated toward high power rectifying antenna (rectenna). The double NO2exposures are introduced to provide high concentration of 2-D h...
Makoto Kasu, Takayoshi Oshima, Kenji Hanada, Tomoya Moribayashi, Akihiro Hashiguchi, Toshiyuki Oishi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda
Japanese Journal of Applied Physics   56(9)    Jan 2017   [Refereed]
© 2017 The Japan Society of Applied Physics. A pixel array of vertical Schottky-barrier diodes (SBDs) was fabricated and measured on the surface of a ð201 Þ ß-Ga2O3single crystal. Subsequently, etch pits and patterns were observed on the same surf...
Takayoshi Oshima, Ryo Wakabayashi, Mai Hattori, Akihiro Hashiguchi, Naoto Kawano, Kohei Sasaki, Kohei Sasaki, Takekazu Masui, Takekazu Masui, Akito Kuramata, Akito Kuramata, Shigenobu Yamakoshi, Shigenobu Yamakoshi, Kohei Yoshimatsu, Akira Ohtomo, Toshiyuki Oishi, Makoto Kasu
Japanese Journal of Applied Physics   55(12)    Dec 2016   [Refereed]
© 2016 The Japan Society of Applied Physics. Sputter-deposited indium-tin oxide (ITO) electrodes became ohmic contacts for unintentionally doped β-Ga2O3(010) substrates with a carrier concentration of 2 × 1017cm-3after rapid thermal annealing in a...
Makoto Kasu, Kenji Hanada, Tomoya Moribayashi, Akihiro Hashiguchi, Takayoshi Oshima, Toshiyuki Oishi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda
Japanese Journal of Applied Physics   55(12)    Dec 2016   [Refereed]
© 2016 The Japan Society of Applied Physics. We fabricated Schottky barrier diodes (SBDs) on the entire surface of a (010) β-Ga2O3single crystal, and investigated the leakage current in both forward and reverse directions. Subsequently, we investi...
Makoto Kasu, Kazuyuki Hirama, Kazuya Harada, Toshiyuki Oishi
Japanese Journal of Applied Physics   55(4)    Apr 2016   [Refereed]
© 2016 The Japan Society of Applied Physics. We study the capacitance-voltage (C-V) characteristics of thermally stable high-performance diamond field-effect transistors (FETs) with NO2 hole doping and an Al2O3 gate insulator layer. We measured C-...

Misc

 
浦田 幸佑, 網代 康佑, 山口 祐太郎, 大塚 友絢, 新庄 真太郎, 大石 敏之
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   118(403) 75-78   Jan 2019
大石 敏之, 大塚 浩志, 山中 宏治
三菱電機技報   85(5) 297-300   May 2011
南條 拓真, 吹田 宗義, 大石 敏之
三菱電機技報   82(6) 389-392   Jun 2008

Conference Activities & Talks

 
K.Urata, K.Ajiro, T.Oishi, Y.Yamaguchi, T.Otsuka,S.Shinjo
JSAP Kyushu Chapter Annual Meeting 2018   9 Dec 2018   
K. Ajiro, K. Urata, T. Oishi, M. Kasu
JSAP Kyushu Chapter Annual Meeting 2018   9 Dec 2018   
T.Kamogawa, T.Oishi, M.Kasu
JSAP Kyushu Chapter Annual Meeting 2018   9 Dec 2018   
Y.Ishimatsu, T.Otsuka, T.Oishi, Y.Yamaguchi, S.Shinjo
JSAP Kyushu Chapter Annual Meeting 2018   9 Dec 2018   
N.Fukami, T.Oshima, T.Oishi
JSAP Kyushu Chapter Annual Meeting 2018   8 Dec 2018   
Y.Yamaguchi, T.Otsuka,S.Shinjo, T.Oishi
2018 Microwave Workshops & Exhibition (MWE 2018)   30 Nov 2018   
Toshiyuki Oishi
2018 Microwave Workshops & Exhibition (MWE 2018)   30 Nov 2018   
山口 裕太郎, 大塚 友絢, 半谷 政毅, 新庄 真太郎, 大石 敏之
電気学会研究会資料. EMT = The papers of technical meeting on electromagnetic theory, IEE Japan   19 Jul 2018   
山口 裕太郎, 新庄 真太郎, 山中 宏治, 大石 敏之
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   26 Jan 2017   
大石 敏之, 山口 裕太郎, 山中 宏治
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   26 Jan 2017