Effects of electron beam irradiation at 15 keV on graphene are investigated by optical and electron characterization using Raman and two-terminal resistance measurement and photoconductivity measurement. In Raman spectra, increase of defects in D-peak to G-peak ratio by increase of electron irradiation by 70 mC/cm(2) was found. Resistance of graphene showed an increase after the irradiation. Rather sensitive change was found in photoconductivity of irradiated graphene under ultra-violet (UV) illumination, suggesting irradiation induced defects affect a photoconductivity properties of the graphene.