2017年2月
Metal-organic vapor phase epitaxy of GaPN alloys via surface nitridation using ammonia
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
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- 巻
- 254
- 号
- 2
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1002/pssb.201600483
- 出版者・発行元
- WILEY-V C H VERLAG GMBH
The present work is intended to pilot the possible use of ammonia precursors for the growth of III-V-N alloys with metal-organic vapor phase epitaxy (MOVPE) as opposed to typical growth procedures using dimethylhydrazine. The GaPN alloys are grown by repeated cycles of surface nitridation and growth of a thin GaP layer with an interval separating the nitridation and growth. The effects of conditions and duration of each step on the N composition and crystallinity are systematically clarified. An N composition is controlled up to 1.6% in the current conditions, maintaining a high crystalline quality comparable to the GaP substrates, while a continuous-supply method yields a much lower value.
- リンク情報
- ID情報
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- DOI : 10.1002/pssb.201600483
- ISSN : 0370-1972
- eISSN : 1521-3951
- ORCIDのPut Code : 45456130
- Web of Science ID : WOS:000394614300017