2018年3月15日
Impact of temperature and nitrogen composition on the growth of GaAsPN alloys
Journal of Crystal Growth
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- 巻
- 486
- 号
- 開始ページ
- 24
- 終了ページ
- 29
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.jcrysgro.2018.01.006
© 2018 Elsevier B.V. This paper presents the impact of temperature and nitrogen-composition on the growth mode and crystallinity of GaAsPN alloys. Reflection high-energy electron diffraction results combined with transmission electron microscopy analysis revealed that maintaining two-dimensional (2-D) growth required higher temperatures when nitrogen composition increased. Outside the 2-D growth windows, stacking faults and micro-twins were preferentially formed at {1 1 1} B planes rather than at the {1 1 1} A planes and anomalous growth was observed. The photoluminescence spectra of GaAsPN layers implies that the higher temperature growth is effective for reducing the nitrogen-related point defects.
- リンク情報
- ID情報
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- DOI : 10.1016/j.jcrysgro.2018.01.006
- ISSN : 0022-0248
- SCOPUS ID : 85041498685