2020年9月
Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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- 巻
- 479
- 号
- 開始ページ
- 7
- 終了ページ
- 12
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.nimb.2020.06.007
- 出版者・発行元
- Elsevier BV
Since Rare-Earth (RE) doped Gallium Nitride (GaN) is expected to be used as electrically driven single photon source at room temperature, low dose RE-ion implantation and their activation as luminescent centers are of interest. This paper reports photoluminescence (PL) properties of Praseodymium (Pr) implanted GaN at different temperatures ranging from room temperature to 1200 degrees C. All the Pr-implanted GaN samples are thermally an-nealed after implantation and show strong PL emissions at 650.2 nm and 652.0 nm, originated from P-3(0)-> F-3(2) transition in 4f-shell of Pr3+ ions. It is shown that the PL intensity originating from Pr3+ ions is reduced as the implantation temperature increases for the Pr-implanted samples annealed at 1200 degrees C. This result suggests that Pr3+ ions quench due to the formation of complex defects and defect clusters. The effect of high temperature implantation on the recovery of GaN crystallinity is discussed in terms of critical dose and displacement damage.
- リンク情報
- ID情報
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- DOI : 10.1016/j.nimb.2020.06.007
- ISSN : 0168-583X
- eISSN : 1872-9584
- Web of Science ID : WOS:000570133600002