2020年2月
Advanced analysis for hot-carriers photoluminescence spectrum
Proceedings of SPIE - The International Society for Optical Engineering
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- 巻
- 11275
- 号
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1117/12.2547244
© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only. Photoluminescence spectroscopy is a powerful technique to investigate the properties of photo-generated hot carriers in materials in steady state conditions. Hot carrier temperature can be determined via fitting the emitted PL spectrum with the generalized Planck's law. However, this analysis is not trivial, especially for nanostructured materials, such as quantum wells, with a modified density of states due to quantum confinement effects. Here, we present comprehensively different methods to determine carrier temperature via fitting the emitted PL spectrum with the generalized Planck's law and discuss under what conditions it is possible to simplify the analysis.
- リンク情報
- ID情報
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- DOI : 10.1117/12.2547244
- ISSN : 0277-786X
- eISSN : 1996-756X
- SCOPUS ID : 85083731927