論文

2020年2月

Advanced analysis for hot-carriers photoluminescence spectrum

Proceedings of SPIE - The International Society for Optical Engineering
  • Hamidreza Esmaielpour
  • ,
  • Maxime Giteau
  • ,
  • Amaury Delamarre
  • ,
  • François Gibelli
  • ,
  • Dac Trung Nguyen
  • ,
  • Nicolas Cavassilas
  • ,
  • Yoshitaka Okada
  • ,
  • Jean François Guillemoles
  • ,
  • Laurent Lombez
  • ,
  • Daniel Suchet

11275
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1117/12.2547244

© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only. Photoluminescence spectroscopy is a powerful technique to investigate the properties of photo-generated hot carriers in materials in steady state conditions. Hot carrier temperature can be determined via fitting the emitted PL spectrum with the generalized Planck's law. However, this analysis is not trivial, especially for nanostructured materials, such as quantum wells, with a modified density of states due to quantum confinement effects. Here, we present comprehensively different methods to determine carrier temperature via fitting the emitted PL spectrum with the generalized Planck's law and discuss under what conditions it is possible to simplify the analysis.

リンク情報
DOI
https://doi.org/10.1117/12.2547244
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85083731927&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85083731927&origin=inward
ID情報
  • DOI : 10.1117/12.2547244
  • ISSN : 0277-786X
  • eISSN : 1996-756X
  • SCOPUS ID : 85083731927

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