2017年3月
Pressure-induced topological phase transition in the polar semiconductor BiTeBr
PHYSICAL REVIEW B
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- 巻
- 95
- 号
- 12
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevB.95.125203
- 出版者・発行元
- AMER PHYSICAL SOC
We performed x-ray diffraction and electrical resistivity measurement up to pressures of 5 GPa and the first-principles calculations utilizing experimental structural parameters to investigate the pressure-induced topological phase transition in BiTeBr having a noncentrosymmetric layered structure (space group P3m1). The P3m1 structure remains stable up to pressures of 5 GPa; the ratio of lattice constants c/a has a minimum at pressures of 2.5-3 GPa. In the same range, the temperature dependence of resistivity changes frommetallic to semiconducting at 3 GPa and has a plateau region between 50 and 150 K in the semiconducting state. Meanwhile, the pressure variation of band structure shows that the bulk band-gap energy closes at 2.9 GPa and re-opens at higher pressures. Furthermore, according to the Wilson loop analysis, the topological nature of electronic states in noncentrosymmetric BiTeBr at 0 and 5 GPa are explicitly revealed to be trivial and nontrivial, respectively. These results strongly suggest that pressure-induced topological phase transition in BiTeBr occurs at the pressures of 2.9 GPa.
- リンク情報
- ID情報
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- DOI : 10.1103/PhysRevB.95.125203
- ISSN : 2469-9950
- eISSN : 2469-9969
- Web of Science ID : WOS:000396430200001