Electrical resistivity and x-ray diffraction measurements have been carried out to investigate the pressure effect on the critical temperature for superconductivity (T-C) and lattice parameters ofAlB(2)-type superconducting silicide YbGa1.1Si0.9 (T-C = 2.4 K) and its referencematerial CaGaSi (T-C = 4.5 K). The electrical resistivity measurements up to 2.5 GPa reveal that T-C decreases with pressure for both silicides and the pressure derivative of T-C (dT(C)/dP) is -0.78 K/GPa and -0.026 K/GPa for YbGa1.1Si0.9 and CaGaSi, respectively. X-ray diffraction measurements up to 3.5 GPa indicate both silicides do not exhibit structural changes in this pressure range and they have similar values for the bulk moduli: B-0 = 40 +/- 2 GPa for YbGa1.1Si0.9 and B-0 = 42 +/- 1 GPa for CaGaSi. The relative pressure derivative of T-C (dlnT(C)/dP) and logarithmic volume derivative of T-C (dlnT(C)/dlnV) are -0.33 GPa(-1) and 13 in YbGa1.1Si0.9. These values are about tenfold larger than those for other AlB2-type superconductors. Additionally, the origin of dlnT(C)/dP and dlnT(C)/dlnV in YbGa1.1Si0.9 relative to the pressure effect on the valence of Yb atoms is discussed.