2006年4月
The formation of hetero-junction using carbon alloys by hot-wire CVD method
THIN SOLID FILMS
- ,
- ,
- 巻
- 501
- 号
- 1-2
- 開始ページ
- 164
- 終了ページ
- 168
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.tsf.2005.07.178
- 出版者・発行元
- ELSEVIER SCIENCE SA
The deposition and fundamental properties of a-Si1-xCx:H thin films made using a butane gas source, and of microcrystalline films including pc-Si:H and mu c-3C-SiC:H are reviewed from the viewpoint of hetero-junction formation. The durability of TiO2 thin films upon atomic hydrogen exposure is also reviewed for suppressing the deoxidation of transparent electrodes accompanied by the use of a new microcrystalline silicon carbon alloy for a window layer. The future direction for the development of hetero-junction Si thin film solar cells by hot-wire CVD is discussed. (c) 2005 Elsevier B.V. All rights reserved.
- リンク情報
-
- DOI
- https://doi.org/10.1016/j.tsf.2005.07.178
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000235979600040&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=32644461615&origin=inward
- ID情報
-
- DOI : 10.1016/j.tsf.2005.07.178
- ISSN : 0040-6090
- Web of Science ID : WOS:000235979600040