Uedono Akira


Uedono Akira

J-GLOBAL         Last updated: Jan 16, 2020 at 02:40
 
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Name
Uedono Akira
Affiliation
University of Tsukuba
Section
Faculty of Pure and Applied Sciences
Job title
Professor

Published Papers

 
Sellaiyan, Selvakumar;Uedono, Akira;devi, vimala;Sivaji, K
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING   125(8) 497   Jul 2019   [Refereed]
The defects species in as-prepared ZnO, Er-doped, and co-doped (with Li/Na/K) nanocrystallites synthesized by combustion method were examined by Positron Annihilation Lifetime (PAL) and Doppler Broadening (DB) spectroscopy. The S and W parameters ...
Accelerator operation 2017
Sasa, Kimikazu;Ishii, Satoshi;Oshima, Hiroyuki;Tajima, Yoshikazu;Takahashi, Tsutomu;Yamato, Yoshihiro;Moriguchi, Tetsuaki;Uedono, Akira
University of Tsukuba Tandem Accelerator Complex (UTTAC) Annual report 2017   1-2   Jul 2018
筑波大学タンデム加速器施設UTTAC の現状(2017 年度)
笹公和;石井聡;大島弘行;高橋努;田島義一;大和良広;松村万寿美;森口, 哲朗;関場大一郎;上殿明良
第31回タンデム加速器及びその周辺技術の研究会報告集   21-24   Dec 2018
Uedono, Akira; Siladie, Alexandra-Madalina; Pernot, Julien; Daudin, Bruno; Ishibashi, Shoji
JOURNAL OF APPLIED PHYSICS   125(17)    May 2019   [Refereed]
Uedono, Akira; Sako, Kaoru; Ueno, Wataru; Kimura, Masao
COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING   122 54-58   Jul 2019   [Refereed]
Yamashita, Yudai; Takahara, Yuuki; Sato, Takuma; Toko, Kaoru; Uedono, Akira; Suemasu, Takashi
APPLIED PHYSICS EXPRESS   12(5)    May 2019   [Refereed]
Sellaiyan, S.;Devi, L. Vimala;Sako, K.;Uedono, A.;Sivaji, K.
JOURNAL OF ALLOYS AND COMPOUNDS   788 549-558   Jun 2019   [Refereed]
Sumiya, M.;Fukuda, K.;Takashima, S.;Ueda, S.;Onuma, T.;Yamaguchi, T.;Honda, T.;Uedono, A.
JOURNAL OF CRYSTAL GROWTH   511 15-18   Apr 2019   [Refereed]
Sato, Yoshihiro; Shibata, Satoshi; Uedono, Akira; Urabe, Keiichiro; Eriguchi, Koji
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   37(1)    Jan 2019   [Refereed]
Iwashita, Shinya; Moriya, Tsuyoshi; Uedono, Akira
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   36(6)    Nov 2018   [Refereed]
Shima, K.;Iguchi, H.;Narita, T.;Kataoka, K.;Kojima, K.;Uedono, A.;Chichibu, S. F.
APPLIED PHYSICS LETTERS   113(19)    Nov 2018   [Refereed]
Yamazaki, Akiyoshi;Naramoto, Hiroshi;Sasa, Kimikazu;Ishii, Satoshi;Tomita, Shigeo;Sataka, Masao;Kudo, Hiroshi;Ohkubo, Masataka;Uedono, Akira
Nuclear Instruments and Methods in Physics Research B   450 319-322   Oct 2018   [Refereed]
We report on the preliminary studies for two-dimensional (2D) mapping of hydrogen and other elements in materials with transmission ERDA and PIXE using a microbeam of 8 MeV He-4. The extremely enhanced forward recoil cross section of hydrogen in t...
Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
THIN SOLID FILMS   660 865-870   Aug 2018   [Refereed]
Accelerator operation 2016
Sasa, Kimikazu;Ishii, Satoshi;Oshima, Hiroyuki;Takahashi, Tsutomu;Yoshikazu, Tajima;Yoshihiro, Yamato;Moriguchi, Tetsuaki;Akira, Uedono
UTTAC ANNUAL REPORT 2016   3-4   Sep 2017
STATUS REPORT OF THE TANDEM ACCELERATOR COMPLEX AT THE UNIVERSITY OF TSUKUBA
Sasa, Kimikazu;Ishii, Satoshi;Oshima, Hiroyuki;Takahashi, Tsutomu;Yoshikazu, Tajima;Yoshihiro, Yamato;Moriguchi, Tetsuaki;Akira, Uedono
Proceedings of the 14th Annual Meeting of Particle Accelerator Society of Japan   1371-1373   Aug 2017
Rajesh, P;Sellaiyan, Selvakumar;Uedono, A;Arun, T;Joseyphus, R Justin
Scientific Reports   8 9764   Jun 2018
Equiatomic flower-like FeCo magnetic nanoparticles are synthesized through a modified one-pot polyol technique. The as-prepared samples are annealed at 700 and 800 °C under reducing atmosphere. The saturation magnetization and coercivity of the fl...
Chichibu, S. F.;Shima, K.;Kojima, K.;Takashima, S.;Edo, M.;Ueno, K.;Ishibashi, S.;Uedono, A.
APPLIED PHYSICS LETTERS   112(21)    May 2018   [Refereed]
筑波大学タンデム加速器施設UTTACの現状(2016年度)
森口, 哲朗;石井聡;大島弘行;高橋努;田島義一;大和良広;関場 大一郎;笹 公和;上殿 明良
第30回タンデム加速器及びその周辺技術の研究会 講演要旨集      Jul 2017
Uedono, Akira; Nabatame, Toshihide; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Sumiya, Masatomo; Ishibashi, Shoji
JOURNAL OF APPLIED PHYSICS   123(15)    Apr 2018   [Refereed]
Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu, Shigefusa F.
JOURNAL OF APPLIED PHYSICS   123(16)    Apr 2018   [Refereed]
Chichibu, S. F.;Uedono, A.;Kojima, K.;Ikeda, H.;Fujito, K.;Takashima, S.;Edo, M.;Ueno, K.;Ishibashi, S.
JOURNAL OF APPLIED PHYSICS   123(16)    Apr 2018   [Refereed]
Uedono, Akira; Yamada, Takahiro; Hosoi, Takuji; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Watanabe, Heiji
APPLIED PHYSICS LETTERS   112(18)    Apr 2018   [Refereed]
Hara,Asuka;Tanaka,Manobu;Kaneko,Junichi;Hirano,Shintaro;Mizukoshi,Tsukasa;Nisiguchi,Hajime;Shimaoka,Takehiro;Yamasaki,Satoshi;Makino,Toshiharu;Koizumi,Satoshi;Uedono,Akira;Yatui,Takashi;Mihara,Satoshi;Tanaka,Shuji;Sanami,Toshiya;Hagiwara,Masayuki;Yoshida,Mitsuhiro;Hashimoto,Yoshinori;Kishimoto,Syunji;Kojima,Kenji;Otomo,Toshiya;Ohshita,Hidetoshi;Seya,Tomohiro
Meeting Abstracts of the Physical Society of Japan   72(0) 55-55   2017   [Refereed]
<p>ダイヤモンドを用いた量子ビーム測定器は、その物性により高耐環境性能(放射線・温度等)、高速応答、低雑音の特徴を持つため、高輝度高強度化に向かう量子ビームを利用した素粒子原子核実験用測定器として注目されている。現在日本はダイヤモンドデバイス研究では世界をリードしており、我々は量子ビーム応用の研究を行ってきた。本講演では北大製CVDダイヤモンド基板を用いた検出器の評価現状と今後の開発予定を報告する。</p>
Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu, Shigefusa F.; Ishibashi, Shoji
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   255(4)    Apr 2018   [Refereed]
Spatio-time-resolved cathodoluminescence study on high AlN mole fraction AlxGa1-xN structures grown by metalorganic vapor phase epitaxy
Chichibu, Shigefusa F.; Ishikawa, Youichi; Furusawa, Kentaro; Uedono, Akira; Miyake, Hideto; Hiramatsu, Kazumasa
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)      2016   [Refereed]
Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam
Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Kudo, Hiroshi; Naramoto, Hiroshi; Ishibashi, Shoji
2016 16th International Workshop on Junction Technology (IWJT)   35-38   2016   [Refereed]
Polarity Dependent Radiation Hardness of GaN
Matsuo, Masayuki; Murayama, Takayuki; Koike, Kazuto; Sasa, Shigehiko; Yano, Mitsuaki; Uedono, Akira; Gonda, Shun-ichi; Ishigami, Ryoya; Kume, Kyo; Ohtomo, Tomomi; Furukawa, Erika; Yamazaki, Yoshiki; Kojima, Kazunobu; Chichibu, Shigefusa
2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)      2015   [Refereed]
Kataoka, Keita; Kanechika, Masakazu; Narita, Tetsuo; Kimoto, Yasuji; Uedono, Akira
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   252(5:::SI) 913-916   May 2015   [Refereed]
Uedono,Akira;Kurihara,Kaori;Yoshihara,Nakaaki;Nagao,Satoshi;Ishibashi,Shoji
APPLIED PHYSICS EXPRESS   8(5) 51002   May 2015   [Refereed]
Vacancy-type defects in In<inf>x</inf>Ga<inf>1−</inf><inf>x</inf>N/GaN multiple-quantum-well (MQW) structures fabricated on m-plane GaN by metal–organic chemical vapor deposition have been studied using a monoenergetic positron beam. Through measu...
Impact of Back Grind Damage on Si Wafer Thinning for 3D Integration
Mizushima,Yoriko;Kim,Youngsuk;Nakamura,Tomoji;Sugie,Ryuichi;Hashimoto,Hideki;Uedono,Akira;Ohba,Takayuki
Technical report of IEICE. SDM   113(451) 13-18   Feb 2014
Ultra-thin wafer is indispensable for bumpless 3D stacking. To know the thinning damage in detail, an atomic level defects occurred during wafer thinning and mechanical stress at micro region of the fracture surface have been studied. The damage w...
28pAL-14 Development of an electrostatic acceleration system for the positron probe
Oshima,N.;Kimura,S.;Watanabe,T.;Uedono,A.;Ito,K.;O'Rourke,B. E.;Suzuki,R.
Meeting abstracts of the Physical Society of Japan   69(1) 930   Mar 2014
Nakaya, Masaki; Shimizu, Mari; Uedono, Akira
THIN SOLID FILMS   564 45-50   Aug 2014   [Refereed]
Development of a method for evaluating samples under humidity controlled air using slow positrons
Oshima,N.;Zhou,Wei;Ito,K.;Chen,Zhe;O'Rourke,Brian;Kuroda,R.;Suzuki,R.;Yanagishita,H.;Tenjinbayashi,K.;Tsutsui,T.;Uedono,A.;Hayashizaki,N.
Meeting abstracts of the Physical Society of Japan   67(1) 989   Mar 2012
29aXZB-7 Development of a High Efficiency Pulsing System using Induction Buncher
Kaneko,T.;Hayashizaki,N.;Oshima,N.;Kinomura,A.;O'Rourke,Brian;Suzuki,R.;Tsutsui,T.;Kimura,S.;Watanabe,T.;Uedono,A.
Meeting abstracts of the Physical Society of Japan   68(1) 1049   Mar 2013
29aXZB-8 The status of the new positron beamline at AIST
O'Rourke,B. E.;Oshima,N.;Kinomura,A.;Ogawa,H.;Suzuki,R.;Tsutsui,T.;Kimura,S.;Watanabe,T.;Uedono,A.
Meeting abstracts of the Physical Society of Japan   68(1) 1049   Mar 2013
Uedono, Akira; Watanabe, Tomohito; Kimura, Shogo; Zhang, Yang; Lozac'h, Mickael; Sang, Liwen; Ishibashi, Shoji; Oshima, Nagayasu; Suzuki, Ryoichi; Sumiya, Masatomo
JOURNAL OF APPLIED PHYSICS   114(18)    Nov 2013   [Refereed]
An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy in Hf-based High-k Gate Oxides
N., Umezawa;K., Shiraishi;Y., Akasaka;S., Inumiya;A., Uedono;S., Miyazaki;T., Chikyow;T., Ohno;Y., Nara;and, K. Yamada
Trans. Material Res. Soc. Jpn.   31 129-132   Jan 2006   [Refereed]
Extensive Studies for the Effect of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics
N., Umezawa;K., Shiraishi;H., Watanabe;K., Torii;Y., Akasaka;S., Inumiya;M., Boero;A., Uedono;S., Miyazaki;T., Ohno;T., Chikyow;K., Yamabe;Y., Nara;K., Yamada
ECS Transaction   2(1) 63-78   Jan 2006   [Refereed]
The Positron Annihilation in GaAs Containing Defects
A., Uedono;Y., Iwase;S., Tanigawa
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 711-713.   711-713   Jan 1985   [Refereed]
Study of Grown-in Defects in InP by the Positron Labeling Technique and Variable Energy Positron Beam
Y., Iwase;A., Uedono;S., Tanigawa;H., Araki
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 753-755.   753-755   Jan 1985   [Refereed]
The Temperature Dependence of a Positron Trapping Effect in Glassy Metals
A., Uedono;Y., Iwase;S., Tanigawa
Positron Annihilation, edited by P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore 1985) p. 865-867.   865-867.   Jan 1985   [Refereed]
Defects in Helium Implanted Metals Studied by Monoenergetic Positron Beam
Y., Iwase;A., Uedono;S., Tanigawa;H., Sakairi
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 868-870.   868-870   Jan 1985   [Refereed]
Precision Experiments on the Divacancy Effect in Dilute Al Alloys
S., Tanigawa;K., Ito;A., Morisue;A., Uedono;Y., Iwase;S., Fujii
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 886-888.   886-888.   Jan 1985   [Refereed]
Application of the Variable Energy Positron Beam to the Study of Si/SiO2 Interface
Y., Iwase;A., Uedono;S., Tanigawa
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 977-979.   977-979.   Jan 1985   [Refereed]
同時比較検出による陽電子消滅ドップラー拡がりの精密測定
岩瀬義倫;上殿明良;谷川庄一郎;鈴木敬愛
Radioisotopes 34, 195-200 (1985).   34 195-200   Jan 1985   [Refereed]
A Study of Agglomeration and Release Processes of Helium Implanted in Nickel by a Variable Energy Positron Beam
S., Tanigawa;Y., Iwase;A., Uedono;H., Sakairi
J. Nucl. Mater. 133&134, 463-467 (1985).   133&134 463-467   Jan 1985   [Refereed]
Generation of Thermal Muonium in Vacuum
A.P., Mills;Jr.;J., Imazato;S., Saitoh;A., Uedono;Y., Kawashima;K., Nagamine
Phys. Rev. Lett. 56, 1463-1466 (1986).   56 1463-1466   Jan 1986   [Refereed]
単一エネルギー低速陽電子を用いた表面解析装置
上殿明良;谷川庄一郎
Radioisotopes 37, 217-220 (1988).   37 217-220   Jan 1988   [Refereed]
単色陽電子線を用いたイオン注入に伴う格子欠陥分布の検出
上殿明良;谷川庄一郎
Ionics 153, 1-11 (1988).   153 1-11   Jan 1988   [Refereed]
Defect Creation Caused by Ion Implantation and Activation Behavior by Rapid Thermal Annealing on Semiconducting Materials
J.-L., Lee;K.-H., Shin;J.S., Kim;H.M., Park;D.S., Ma;S., Tanigawa;A., Uedono
J. Korean Int. of Telematic and Electronics 25, 1447-1457 (1988).   25 1447-1457   Jan 1988   [Refereed]
Defect Characterization of Si+-Implanted GaAs by Monoenergetic Positron Beam Technique
J.-L., Lee;K.-H., Shin;S., Tanigawa;A., Uedono;J.S., Kim;H.M., Park;D.S., Ma
J. de Phys. Colloque C4, 457-460 (1988).   457-460   Jan 1988   [Refereed]
Depth Profiles of Ion-Implantation Induced Vacancy-Type Defects in GaAs and Si Observed by Slow Positron
J.-L., Lee;J.S., Kim;H.M., Park;D.S., Ma;S., Tanigawa;A., Uedono
Appl. Phys. Lett. 53, 1302-1304 (1988).   53 1302-1304   Jan 1988   [Refereed]
Detection of Helium Implanted into Nickel by Slow Positrons
A., Uedono;S., Tanigawa;H., Sakairi
Phys. Lett. A. 129, 249-252 (1988).   129 249-252   Jan 1988   [Refereed]
Depth Profile of Vacancy-Type Defects in B+-Implanted Si with a SiO2 Overlayer by a Variable-Energy Positron Beam
A., Uedono;S., Tanigawa;J., Sugiura;M., Ogasawara
Appl. Phys. Lett. 53, 25-27 (1988).   53 25-27   Jan 1988   [Refereed]
Variable-Energy Positron-Beam Studies of SiO2/Si Irradiated by Ionizing Radiation
A., Uedono;S., Tanigawa;K., Suzuki;K., Watanabe
Appl. Phys. Lett. 53, 473-475 (1988).   53 473-475   Jan 1988   [Refereed]
Metal/Oxide/Semiconductor Interface Investigated by Monoenergetic Positrons
A., Uedono;S., Tanigawa;Y., Ohji
Phys. Lett. A 133, 82-84 (1988).   133 82-84   Jan 1988   [Refereed]
単色陽電子線による半導体の表面・界面近傍の欠陥評価
上殿明良;谷川庄一郎
応用物理 58, 918-923 (1989).   58 918-923   Jan 1989   [Refereed]
Distribution of He Implanted Into Metals Probed by Monoenergetic Positrons
A., Uedono;S., Tanigawa;H., Sakairi
Positron Annihilation , eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 413-415.   413-415.   Jan 1989   [Refereed]
Ion-Implantation-Induced Damage in Si Studied by Monoenergetic Positrons
A., Uedono;S., Tanigawa;J., Sugiura;M., Ogasawara
Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 690-692.   690-692.   Jan 1989   [Refereed]
The Accumulation and Inversion States of SiO2/Si Interface of MOS Structure Investigated by a Variable-Energy Positron Beam
A., Uedono;S., Tanigawa;Y., Ohji
Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 711-713.   711-713.   Jan 1989   [Refereed]
Depth Profiles of Vacancy-Type Defect in Si+-Implanted GaAs Resulting From Rapid Thermal Annealing
J.-L., Lee;K.-H, Shim;J.S., Kim;H.M., Park;D.S., Ma;S., Tanigawa;A., Uedono
J. Appl. Phys. 65, 396-397 (1989).   65 396-397   Jan 1989   [Refereed]
A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam
A., Uedono;S., Tanigawa;J., Sugiura;M., Ogasawara
Jpn. J. Appl. Phys. 28, 1293-1297 (1989).   28 1293-1297   Jan 1989   [Refereed]
陽電子消滅法による材料表面の解析
上殿明良;谷川庄一郎
表面科学 11, 598-603 (1990).   11 598-603   Jan 1990   [Refereed]
Depth Profiles of Vacancy-Type Defects in Ion-Implanted Si Studied by Monoenergetic Positron Beam
A., Uedono;S., Tanigawa;J., Sugiura;M., Ogasawara
Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 495-500.   495-500.   Jan 1990   [Refereed]
Photoplastic Effect and Characteristics of Dislocations in Organic Semiconductors
K., Kojima;A., Uedono
Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 1673-1678.   1673-1678.   Jan 1990   [Refereed]
Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
A., Uedono;S., Tanigawa;H., Funamoto;A., Nishikawa;K., Takahashi
Jpn. J. Appl. Phys. 29, 555-559 (1990).   29 555-559   Jan 1990   [Refereed]
Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
A., Uedono;S., Tanigawa
Jpn. J. Appl. Phys. 29, 909-912 (1990).   29 909-912   Jan 1990   [Refereed]
Vacancy-type Defects in Si+-Implanted GaAs and Its Effects on Electrical Activation by Rapid Thermal Annealing
J.-L., Lee;A., Uedono;S., Tanigawa;J., Y. Lee
J. Appl. Phys. 67, 6153-6158 (1990).   67 6153-6158   Jan 1990   [Refereed]
Study of Near Surface Defects in He-Implanted Stainless Steels by Monoenergetic Positron Beam
A., Uedono;S., Tanigawa;H., Sakairi
J. Nucl. Mater. 173, 307-312 (1990).   173 307-312   Jan 1990   [Refereed]
Vacancy-Type Defects in As+-Implanted SiO2(43 nm)/Si Probed with Slow Positrons
A., Uedono;S., Tanigawa;J., Sugiura;M., Ogasawara
Jpn. J. Appl. Phys. 29, 1867-1872 (1990).   29 1867-1872   Jan 1990   [Refereed]
Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
A., Uedono;S., Tanigawa
Jpn. J. Appl. Phys. 29, L346-L348 (1990).   29 L346-L348   Jan 1990   [Refereed]
表面・界面プローブとしての低速陽電子
上殿明良;谷川庄一郎
表面技術 41, 355-360 (1990).   41 355-360   Jan 1990   [Refereed]
Vacancy-Type Defects and Their Annealing Processes in Ion-Implanted Si Studied by a Variable-Energy Positron Beam
A., Uedono;L., Wei;S., Tanigawa;J., Sugiura;M., Ogasawara
Proc. of Int. Conf. on Evolution in Beam Applications (Takasaki, 1991, Japan) p. 73-78.   73-78.   Jan 1991   [Refereed]
Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
K., Terashima;E., Tokizaki;A., Uedono;L., Wei;H., Kondo;S., Tanigawa
Proc. of Int. Conf. on Evolution in Beam Applications (Takasaki, 1991, Japan) p. 187-190.   187-190.   Jan 1991   [Refereed]
Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam
A., Uedono;L., Wei;C., Dosho;H., Kondo;S., Tanigawa;J., Sugiura;M., Ogasawara
Jpn. J. Appl. Phys. 30, 201-206 (1991).   30 201-206   Jan 1991   [Refereed]
Release Processes of He Implanted in Cu and Ni Studied by a Monoenergetic Positron Beam
A., Uedono;S., Tanigawa;H., Sakairi
J. Nucl. Mater. 184, 191-196 (1991).   184 191-196   Jan 1991   [Refereed]
Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
A., Uedono;L., Wei;C., Dosho;H., Kondo;S., Tanigawa;M., Tamura
Jpn. J. Appl. Phys. 30, 1597-1603 (1991).   30 1597-1603   Jan 1991   [Refereed]
Effects of the Fermi Level on Defects in Be+-Implanted GaAs Studied by a Monoenergetic Positron Beam
A., Uedono;L., Wei;Y., Tabuki;H., Kondo;S., Tanigawa;K., Wada;H., Nakanishi
Jpn. J. Appl. Phys. 30, L2002-L2005 (1991).   30 L2002-L2005   Jan 1991   [Refereed]
筑波大学における放射性同位元素を用いた低速陽電子線発生装置
上殿明良;谷川庄一郎
放射線 18, 41-54 (1992).   18 41-54   Jan 1992   [Refereed]
単色陽電子線による表面・界面近傍の格子欠陥の検出
谷川庄一郎;上殿明良
放射線 18, 83-98 (1992).   18 83-98   Jan 1992   [Refereed]
陽電子消滅誘起オ-ジェ電子分光
上殿明良
化学と工業 45, 989-990 (1992).   45 989-990   Jan 1992   [Refereed]
ミクロなプロ-ブとして用いた低速陽電子
上殿明良;谷川庄一郎
センサ技術 12, 50-54 (1992).   12 50-54   Jan 1992   [Refereed]
ポジトロン消滅と材料の解析
上殿明良;谷川庄一郎
表面 30, 588-597 (1992).   30 588-597   Jan 1992   [Refereed]
ドップラー拡がり測定と寿命測定
上殿明良
Radioisotopes 41, 474-482 (1992).   41 474-482   Jan 1992   [Refereed]
低速陽電子ビ-ムの発生
谷川庄一郎;上殿明良;鈴木良一
Radioisotopes 41, 536-542 (1992).   41 536-542   Jan 1992   [Refereed]
自動温度可変消滅γ線ドップラー拡がり測定装置の製作と金属の熱平衡状態測定への応用
上殿明良;河野孝央;谷川庄一郎
Radioisotopes 41, 570-573 (1992).   41 570-573   Jan 1992   [Refereed]
半導体の欠陥研究
上殿明良
Radioisotopes 41, 600-610 (1992).   41 600-610   Jan 1992   [Refereed]
The Effect of Point Defects Introduced by Proton Irradiation on Positron Annihilation in Si
Y., K. Cho;H., Kondo;T., Kubota;H., Nakashima;T., Kawano;A., Uedono;T., Kurihara;S., Tanigawa
Materials Science Forum   105/110 925-928   Jan 1992   [Refereed]
Oxygen Microclusters in Quenched Si Studied by Positron Annihilation
A., Uedono;Y., Ujihira;A., Ikari;H., Haga;O., Yoda
Materials Science Forum   105/110 1301-1304   Jan 1992   [Refereed]
Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions
A., Uedono;L., Wei;C., Dosho;Y., Tabuki;H., Kondo;S., Tanigawa;M., Tamura
Materials Science Forum   105/110 1471-1474   Jan 1992   [Refereed]
A Diffusion of Positrons by an Electric Field in MOS Transistors
A., Uedono;L., Wei;Y., Tabuki;H., Kondo;S., Tanigawa;Y., Ohji
Materials Science Forum   105/110 1475-1478   Jan 1992   [Refereed]
Vacancy-Type Defects in Si+- and B+-Implanted Si Probed by a Monoenergetic Positron Beam
A., Uedono;L., Wei;Y., Tabuki;H., Kondo;S., Tanigawa;J., Sugiura;M., Ogasawara
Materials Science Forum   105/110 1479-1482   Jan 1992   [Refereed]
Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation
A., Uedono;L., Wei;Y., Tabuki;H., Kondo;S., Tanigawa;K., Wada;H., Nakanishi
Materials Science Forum   105/110 1483-1486   Jan 1992   [Refereed]
Variation of Free Volumes in Polyvinyl Alcohol Studied by Positron Annihilation
Y., Suda;A., Uedono;Y., Ujihira
Materials Science Forum   105/110 1721-1724   Jan 1992   [Refereed]
Increase of I4 at Melting Point Found in Polyethylene and Serious Thermal Hysteresis Found in Polypropylene
M., Tanaka;K., Takebe;A., Uedono;Y., Ujihira;K., Horie;T., Asanuma
Materials Science Forum   105/110 1737-1740   Jan 1992   [Refereed]
Free Volumes in Amine-Cured Epoxy Studied by Positron Annihilation
E., Ueda;A., Uedono;Y., Ujihira;S., Yamashita;T., Naito;K., Horie
Materials Science Forum   105/110 1745-1748   Jan 1992   [Refereed]
Free-Volumes in Polypropylene Probed by Positron Annihilation
A., Uedono;Y., Ohko;S., Watauchi;Y., Ujihira
Proc. of Int. Symp. on Material Chemistry in Nuclear Environment (Tsukuba, 1992, Japan) p. 479-487.   479-487   Jan 1992   [Refereed]
Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal
A., Ikari;H., Haga;O., Yoda;A., Uedono;Y., Ujihira
Materials Research Society Symposium Proceedings   262 69-74   Jan 1992   [Refereed]
Point Defect Assisted Crystal Growth of Bulk ZnSe
K., Terashima;E., Tokizaki;H., Kondo;S., Tanigawa;A., Uedono
Materials Research Society Symposium Proceedings   262 111-116   Jan 1992   [Refereed]
Evaluation of Vacancy-Type Defects in SIMOX Substrates by a Slow Positron Beam and a Pulsed Positron Beam
H., Kametani;H., Akiyama;Y., Yamaguchi;M., Koumaru;L., Wei;Y., Tabuki;S., Tanigawa;A., Uedono;S., Watauchi;Y., Ujihira;R., Suzuki;H., Ohgaki;T., Mikado
Materials Research Society Symposium Proceedings   262 235-240   Jan 1992   [Refereed]

Books etc

 
GALLIUM NITRIDE MATERIALS AND DEVICES VI
Uedono, Akira;Ishibashi, Shoji;Chichibu, Shigefusa F.;Akimoto, Katsuhiro (Part:Contributor, Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING   Jan 2011   ISBN:9780819484765
12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12)
Uedono, A.;Ishibashi, S.;Oshima, N.;Ohdaira, T.;Suzuki, R. (Part:Contributor, Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD   Jan 2011   
Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10
Uedono, A.;Naito, T.;Otsuka, T.;Ito, K.;Shiraishi, K.;Yamabe, K.;Miyazaki, S.;Watanabe, H.;Umezawa, N.;Hamid, A.;Chikyow, T.;Ohdaira, T.;Suzuki, R.;Ishibashi, S.;Inumiya, S.;Kamiyama, S.;Akasaka, Y.;Nara, Y.;Yamada, K. (Part:Contributor, Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH   Jan 2007   
PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE
Uedono, A.;Inoue, N.;Hayashi, Y.;Eguchi, K.;Nakamura, T.;Hirose, Y.;Yoshimaru, M.;Oshima, N.;Ohdaira, T.;Suzuki, R. (Part:Contributor, Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE   Jan 2009   ISBN:9781424444915
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS
Uedono, A;Kiyohara, M;Shimoyama, K;Matsunaga, Y;Yasui, N;Yamabe, K (Part:Contributor, Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD   Jan 2004   ISBN:0878499369

Conference Activities & Talks

 
Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE
Yamazaki, A.;Naramoto, H.;Sasa, K.;Ishii, S.;Tomita, S.;Sataka, M.;Kudo, H.;Ohkubo, M.;Uedono, A.
23rd International Conference on Ion Beam Analysis (IBA)   8 Oct 2017   
陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出
Akira, Uedono;Islam, Muhammad Monirul;Sakurai, Takeaki;katsuhiro, Akimoto
2018年第79応用物理学会 秋季学術講演会   18 Sep 2018   
Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy
Sumiya, M.;Fukuda, K.;Takashima, S.;Ueda, S.;Onuma, T.;Yamaguchi, T.;Honda, T.;Uedono, A.
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE)   3 Jun 2018   
Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT)   15 Oct 2017   
筑波大学タンデム加速器施設UTTACの現状(2016年度)
森口, 哲朗;石井聡;大島弘行;高橋努;田島義一;大和良広;関場 大一郎;笹 公和;上殿 明良
第30回タンデム加速器及びその周辺技術の研究会   6 Jul 2017