2017年3月
Improvement of m-plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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- 巻
- 214
- 号
- 3
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1002/pssa.201600603
- 出版者・発行元
- WILEY-V C H VERLAG GMBH
The crystal quality of ZnO films grown by mist chemical vapor deposition (mist-CVD) was improved by introducing ZnO buffer layers on sapphire substrates. The ZnO films were grown by high-speed rotation-type mist-CVD with a ZnCl2 aqueous solution, which provided uniform epitaxial layers over 2-inch wafers. To grow the ZnO buffer layers, it is necessary to form small grains of polycrystal. Therefore, we attempted to grow the ZnO buffer layers using a Zn(CH3COO)(2) aqueous solution, which provides a small grain size of about 100nm. By using the buffer layers, the full width at half-maximum of an X-ray -rocking curve for the ZnO film was reduced from 0.69 degrees to 0.38 degrees, showing improvement of the crystal quality.
- リンク情報
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- DOI
- https://doi.org/10.1002/pssa.201600603
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000397577000021&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85009230708&origin=inward
- ID情報
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- DOI : 10.1002/pssa.201600603
- ISSN : 1862-6300
- eISSN : 1862-6319
- SCOPUS ID : 85009230708
- Web of Science ID : WOS:000397577000021