2002年3月
Synthesis of B-C-N thin films by electron beam excited plasma CVD
DIAMOND AND RELATED MATERIALS
- ,
- ,
- 巻
- 11
- 号
- 3-6
- 開始ページ
- 1290
- 終了ページ
- 1294
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/S0925-9635(01)00613-6
- 出版者・発行元
- ELSEVIER SCIENCE SA
Boron-carbon-nitrogen (B-C-N) thin films were synthesized using an electron beam excited plasma (EBEP)-CVD method and their properties and structure investigated. By controlling the flow rate ratios of process gases, we obtained films with composition expressed as BxCyN, where x = 0.9-4.7 and y = 0.5-6.0. Hydrogen content is very small, of the order of 1 at. %. The hardness of the films increases monotonically with increasing boron content and reaches 29 GPa. Results of X-ray photoelectron spectroscopy, Fourier transform infrared transmission and X-ray diffraction measurements show that while the films consist of a sp(2)-bonded B-C-N structure in a boron poor region, a sp(3)-bonded structure exists as well as the sp(2)-bonded structure in a boron rich region. (C) 2002 Elsevier Science B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/S0925-9635(01)00613-6
- ISSN : 0925-9635
- Web of Science ID : WOS:000176046300202