MISC

2002年3月

Synthesis of B-C-N thin films by electron beam excited plasma CVD

DIAMOND AND RELATED MATERIALS
  • T Hasegawa
  • ,
  • K Yamamoto
  • ,
  • Y Kakudate

11
3-6
開始ページ
1290
終了ページ
1294
記述言語
英語
掲載種別
DOI
10.1016/S0925-9635(01)00613-6
出版者・発行元
ELSEVIER SCIENCE SA

Boron-carbon-nitrogen (B-C-N) thin films were synthesized using an electron beam excited plasma (EBEP)-CVD method and their properties and structure investigated. By controlling the flow rate ratios of process gases, we obtained films with composition expressed as BxCyN, where x = 0.9-4.7 and y = 0.5-6.0. Hydrogen content is very small, of the order of 1 at. %. The hardness of the films increases monotonically with increasing boron content and reaches 29 GPa. Results of X-ray photoelectron spectroscopy, Fourier transform infrared transmission and X-ray diffraction measurements show that while the films consist of a sp(2)-bonded B-C-N structure in a boron poor region, a sp(3)-bonded structure exists as well as the sp(2)-bonded structure in a boron rich region. (C) 2002 Elsevier Science B.V. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/S0925-9635(01)00613-6
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000176046300202&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/S0925-9635(01)00613-6
  • ISSN : 0925-9635
  • Web of Science ID : WOS:000176046300202

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