MISC

2010年7月

LOW-TEMPERATURE CRYSTALLIZATION OF AMORPHOUS SILICATE IN ASTROPHYSICAL ENVIRONMENTS

ASTROPHYSICAL JOURNAL
  • Kyoko K. Tanaka
  • ,
  • Tetsuo Yamamoto
  • ,
  • Hiroshi Kimura

717
1
開始ページ
586
終了ページ
596
記述言語
英語
掲載種別
DOI
10.1088/0004-637X/717/1/586
出版者・発行元
IOP PUBLISHING LTD

We construct a theoretical model for low-temperature crystallization of amorphous silicate grains induced by exothermic chemical reactions. As a first step, the model is applied to the annealing experiments, in which the samples are (1) amorphous silicate grains and (2) amorphous silicate grains covered with an amorphous carbon layer. We derive the activation energies of crystallization for amorphous silicate and amorphous carbon from the analysis of the experiments. Furthermore, we apply the model to the experiment of low-temperature crystallization of an amorphous silicate core covered with an amorphous carbon layer containing reactive molecules. We clarify the conditions of low-temperature crystallization due to exothermic chemical reactions. Next, we formulate the crystallization conditions so as to be applicable to astrophysical environments. We show that the present crystallization mechanism is characterized by two quantities: the stored energy density Q in a grain and the duration of the chemical reactions tau. The crystallization conditions are given by Q > Q(min) and tau < tau(cool) regardless of details of the reactions and grain structure, where tcool is the cooling timescale of the grains heated by exothermic reactions, and Q(min) is minimum stored energy density determined by the activation energy of crystallization. Our results suggest that silicate crystallization occurs in wider astrophysical conditions than hitherto considered.

リンク情報
DOI
https://doi.org/10.1088/0004-637X/717/1/586
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000278777900052&DestApp=WOS_CPL
ID情報
  • DOI : 10.1088/0004-637X/717/1/586
  • ISSN : 0004-637X
  • Web of Science ID : WOS:000278777900052

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