MISC

2003年5月

Sequential implantation of halogen and copper ions in silica glass

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • K Fukumi
  • ,
  • A Chayahara
  • ,
  • H Kageyama
  • ,
  • A Kinomura
  • ,
  • Y Mokuno
  • ,
  • N Kitamura
  • ,
  • K Kadono
  • ,
  • Y Horino
  • ,
  • J Nishii

206
開始ページ
353
終了ページ
356
記述言語
英語
掲載種別
DOI
10.1016/S0168-583X(03)00761-4
出版者・発行元
ELSEVIER SCIENCE BV

Halogen ions (Cl, Br and 1) and copper ions have been implanted in silica glass at the same dose and at energies of the order of MeV, sequentially. The coordination structure of implanted copper atoms has been studied by X-ray absorption fine structure spectroscopy. It was found that implanted Cu atoms were coordinated with two oxygen atoms in all the as-implanted glasses. Heat treatment in air caused the formation of copper-halogen bonds without the formation of halide crystals. Further heat-treatment caused the formation of halide crystals in the glasses. (C) 2003 Elsevier Science B.V. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/S0168-583X(03)00761-4
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000183690500078&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/S0168-583X(03)00761-4
  • ISSN : 0168-583X
  • Web of Science ID : WOS:000183690500078

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