2003年5月
Sequential implantation of halogen and copper ions in silica glass
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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- 巻
- 206
- 号
- 開始ページ
- 353
- 終了ページ
- 356
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/S0168-583X(03)00761-4
- 出版者・発行元
- ELSEVIER SCIENCE BV
Halogen ions (Cl, Br and 1) and copper ions have been implanted in silica glass at the same dose and at energies of the order of MeV, sequentially. The coordination structure of implanted copper atoms has been studied by X-ray absorption fine structure spectroscopy. It was found that implanted Cu atoms were coordinated with two oxygen atoms in all the as-implanted glasses. Heat treatment in air caused the formation of copper-halogen bonds without the formation of halide crystals. Further heat-treatment caused the formation of halide crystals in the glasses. (C) 2003 Elsevier Science B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/S0168-583X(03)00761-4
- ISSN : 0168-583X
- Web of Science ID : WOS:000183690500078