1997年5月
Gettering of platinum and silver to cavities formed by hydrogen implantation in silicon
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
- ,
- ,
- ,
- 巻
- 127
- 号
- 開始ページ
- 297
- 終了ページ
- 300
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/S0168-583X(96)00943-3
- 出版者・発行元
- ELSEVIER SCIENCE BV
The gettering of Pt and Ag to hydrogen-induced cavities was studied using Rutherford backscattering (RES) and secondary ion mass spectrometry (SIMS) for metal doses ranging from 1 x 10(13) to 1 x 10(15) cm(-2). Almost 100% of the introduced metals were relocated to the cavity band for doses lower than 1 x 10(14) cm(-2) and 3 x 10(14) cm(-2) for Pt and Ag, respectively. However, the extent of gettering was observed to be dose dependent. At a higher metal-implant dose of 1 x 10(15) cm(-2), the extent of gettering decreased to 6% for Pt and 50% for Ag. We suggest that silicide phase formation, favoured in the case of high dose Pt, is the main cause of the differences observed between Pt and Ag. Our results indicate that the extent of gettering is influenced strongly by the state of the metal within the implanted layer during annealing.
- リンク情報
- ID情報
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- DOI : 10.1016/S0168-583X(96)00943-3
- ISSN : 0168-583X
- Web of Science ID : WOS:A1997XG60500067