論文

査読有り
1997年5月

Gettering of platinum and silver to cavities formed by hydrogen implantation in silicon

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • A Kinomura
  • ,
  • JS Williams
  • ,
  • J WongLeung
  • ,
  • M Petravic

127
開始ページ
297
終了ページ
300
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/S0168-583X(96)00943-3
出版者・発行元
ELSEVIER SCIENCE BV

The gettering of Pt and Ag to hydrogen-induced cavities was studied using Rutherford backscattering (RES) and secondary ion mass spectrometry (SIMS) for metal doses ranging from 1 x 10(13) to 1 x 10(15) cm(-2). Almost 100% of the introduced metals were relocated to the cavity band for doses lower than 1 x 10(14) cm(-2) and 3 x 10(14) cm(-2) for Pt and Ag, respectively. However, the extent of gettering was observed to be dose dependent. At a higher metal-implant dose of 1 x 10(15) cm(-2), the extent of gettering decreased to 6% for Pt and 50% for Ag. We suggest that silicide phase formation, favoured in the case of high dose Pt, is the main cause of the differences observed between Pt and Ag. Our results indicate that the extent of gettering is influenced strongly by the state of the metal within the implanted layer during annealing.

リンク情報
DOI
https://doi.org/10.1016/S0168-583X(96)00943-3
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:A1997XG60500067&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/S0168-583X(96)00943-3
  • ISSN : 0168-583X
  • Web of Science ID : WOS:A1997XG60500067

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