Silicon carbide (SiC) films were prepared by simultaneous irradiation of energetic, isotopical mass-separated Si-28(-) and C-12(+) ions. Kinetic energies of both ions were 200 eV and deposition temperatures were room temperature. 400 and 600 degrees C. investigations of die basic film properties such as film composition, impurity, structures, etc. have been undertaken using infrared absorption (IR) spectroscopy. Xray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED) measurements. Growth temperatures of SiC polycrystalline films under irradiation of ions for film deposition were investigated through the above, measurements.