1999年9月
Reliability testing for the next generation of ULSI with SOI MOSFETs
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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- 巻
- 158
- 号
- 1-4
- 開始ページ
- 432
- 終了ページ
- 436
- 記述言語
- 英語
- 掲載種別
- 研究論文（学術雑誌）
- DOI
- 10.1016/S0168-583X(99)00388-2
- 出版者・発行元
- ELSEVIER SCIENCE BV
The reliability of partially depleted SOI MOSFETs against ion strikes has been investigated using a high energy nuclear microprobe. Transient SOI MOSFET behaviour during ion strike has been compared with that obtained by three-dimensional computer simulation,
Both SOI MOSFET structures with and without a floating body have been tested to investigate the mechanism of transient MOSFET upset behaviour against ion beam strikes, resulting in SOI DRAM SEU. (C) 1999 Elsevier Science B.V. All rights reserved.
Both SOI MOSFET structures with and without a floating body have been tested to investigate the mechanism of transient MOSFET upset behaviour against ion beam strikes, resulting in SOI DRAM SEU. (C) 1999 Elsevier Science B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/S0168-583X(99)00388-2
- ISSN : 0168-583X
- Web of Science ID : WOS:000083666700072