2002年12月
Ion-beam 3C-SiC heteroepitaxy on Si
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
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- 巻
- 41
- 号
- 12
- 開始ページ
- 7353
- 終了ページ
- 7354
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JJAP.41.7353
- 出版者・発行元
- INST PURE APPLIED PHYSICS
3C-SiC heteroepitaxy on Si using mass-selected ion beams has been performed, monitoring the surface structural evolution by reflection high-energy electron diffraction (RHEED). The root-mean-square (RMS) surface roughness of the grown 3C-SiC layer is similar to0.4 nm. The process temperatures of both carbonization and SiC epilayer formation are similar to670degreesC.
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.41.7353
- ISSN : 0021-4922
- Web of Science ID : WOS:000182825900017