MISC

2008年9月

Effects of high-fluence ion implantation on colorless diamond self-standing films

JOURNAL OF APPLIED PHYSICS
  • H. Amekura
  • ,
  • N. Kishimoto

104
6
開始ページ
063509
終了ページ
記述言語
英語
掲載種別
DOI
10.1063/1.2978215
出版者・発行元
AMER INST PHYSICS

Self-standing polycrystalline diamond films fabricated by chemical vapor deposition, which were transparent up to the intrinsic band edge of similar to 5.5 eV, were implanted with boron negative dimer ions (B ((2)) over bar) of 60 keV at various fluences ranging from 1 X 10(14) to 3 X 10(17) B/cm(2). Even at the lowest fluence of 1 X 10(14) B/cm(2), a weak color darkening was observed by the naked eye, indicating the optical absorption due to damage, not to implants. The subbandgap absorption tail increases with the fluence to the powers of similar to 0.5 and similar to 0.2 in the fluence regions lower and higher, respectively, than the transition fluence of similar to 1 X 10(16) B/cm(2). The implanted regions also show large surface swelling of up to similar to 60 nm in height. The swelling shows the same two-step power-law dependence with the same transition fluence. The same two-step power-law fluence dependence with the same transition fluence is also observed in the intensity of the defect Raman band around 1520 cm(-1). From the good agreement between the estimated volume change due to graphitization and the measured swelling, the transition fluence is ascribed to the fluence where all the diamond structures in the implanted layer are transformed to graphitelike structures. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2978215]

リンク情報
DOI
https://doi.org/10.1063/1.2978215
CiNii Articles
http://ci.nii.ac.jp/naid/80019942908
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000260119300036&DestApp=WOS_CPL
ID情報
  • DOI : 10.1063/1.2978215
  • ISSN : 0021-8979
  • CiNii Articles ID : 80019942908
  • Web of Science ID : WOS:000260119300036

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