木内 正人

50 eV O+ ion induced deposition of tin dioxide using tetramethyltin 

Heliyon 11(3) e42442-e42442 2025年2月  査読有り

Low-energy N+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate, hexamethyldisiloxane, or hexamethyldigermane 

AIP Advances 14(9) 2024年9月1日  査読有り

Low-energy O+ or SiO+ ion beam induced deposition of silicon oxide using hexamethyldisiloxane 

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 549 165276-165276 2024年4月  査読有り

Silicon oxide film formation by spraying tetraethyl orthosilicate onto substrate with simultaneous low-energy SiO+ ion-beam irradiation 

AIP Advances 13(11) 2023年11月1日  査読有り

Deposition of germanium dioxide films by the injection of oxygen ion beam in conjunction with hexamethyldigermane 

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1056 168707-168707 2023年11月  査読有り

Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane 

Heliyon e19002-e19002 2023年8月  査読有り

Low-energy Ar+ ion-beam-induced chemical vapor deposition of silicon dioxide films using tetraethyl orthosilicate 

Heliyon e14643-e14643 2023年3月  査読有り

Injection of low-energy SiCH₅⁺ ion-beam to Si substrate during chemical vapor deposition process using methylsilane 

AIP Advances 12(11) 115104-115104 2022年11月1日  査読有り

Low-energy oxygen ion beam induced chemical vapor deposition using methylsilane or dimethylsilane for the formation of silicon dioxide films 

Thin Solid Films 139508-139508 2022年9月  査読有り

Low-energy Ar+ ion beam induced chemical vapor deposition of silicon carbide films using dimethylsilane 

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 527 40-44 2022年9月  査読有り

Low-energy O+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate for silicon dioxide film formation 

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 511 113-117 2022年1月  査読有り

Low-energy O+ ion beam induced chemical vapor deposition using hexamethyldisilane or hexamethyldisilazane for silicon dioxide film formation 

AIP Advances 11(12) 125328-125328 2021年12月1日  査読有り

Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films 

PLOS ONE 16(10) e0259216-e0259216 2021年10月27日  査読有り

Identification of fragment ions produced by the decomposition of tetramethyltin and the production of low-energy Sn+ ion beam 

PLOS ONE 16(6) e0253870-e0253870 2021年6月25日  査読有り

Macroaggregation effect of TiO2nanoparticles on the photocatalytic activity and post-reaction separation for aqueous degradation of organic compounds 

Journal of Environmental Chemical Engineering 9(1) 2021年2月1日  査読有り

Production of low-energy SiCH3+ and SiC2H7+ ion beams for 3C-SiC film formation by selecting fragment ions from dimethylsilane 

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 487 85-89 2021年1月  査読有り

Production of low-energy fragment-ion beams from hexamethyldisiloxane and the irradiation of SiO+ ion beam to substrates with supplemental oxygen gas for SiO2 film formation 

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 479 13-17 2020年9月  査読有り