松田 彰久

High-rate microcrystalline silicon deposition for p-i-n junction solar cells 

SOLAR ENERGY MATERIALS AND SOLAR CELLS 90(18-19) 3199-3204 2006年11月  

Hopping transport of electrons and holes at localized band tail states in amorphous hydrogenated silicon and amorphous heavy-hydrogenated silicon 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44(7A) 4764-4769 2005年7月  

Doping properties of boron-doped microcrystalline silicon from B2H6 and BF3: material properties and solar cell performance 

JOURNAL OF NON-CRYSTALLINE SOLIDS 338 646-650 2004年6月  

Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasma 

JOURNAL OF NON-CRYSTALLINE SOLIDS 338 42-46 2004年6月  

High-rate growth of microcrystalline silicon films using a high-density SiH4/H-2 glow-discharge plasma 

THIN SOLID FILMS 457(1) 84-89 2004年6月  

Nucleation mechanism of microcrystalline silicon from the amorphous phase 

JOURNAL OF NON-CRYSTALLINE SOLIDS 338 97-101 2004年6月  

Real-time studies of amorphous and microcrystalline Si : H growth by spectroscopic ellipsometry and infrared spectroscopy 

THIN SOLID FILMS 455 670-674 2004年5月  

Real-time observation of the energy band diagram during microcrystalline silicon p-i interface formation 

APPLIED PHYSICS LETTERS 83(21) 4348-4350 2003年11月  

Origin of the improved performance of high-deposition-rate microcrystalline silicon solar cells by high-pressure glow discharge 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42(8A) L901-L903 2003年8月  

Control of plasma chemistry for preparing highly stabilized amorphous silicon at high growth rate 

SOLAR ENERGY MATERIALS AND SOLAR CELLS 78(1-4) 3-26 2003年7月  

Fundamental aspects of low-temperature growth of microcrystalline silicon 

THIN SOLID FILMS 430(1-2) 130-134 2003年4月  

A novel approach for the growth of Rc-Si at a high rate over 3 nm/s 

THIN SOLID FILMS 427(1-2) 33-36 2003年3月  

Interface-layer formation in microcrystalline Si : H growth on ZnO substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy 

JOURNAL OF APPLIED PHYSICS 93(5) 2400-2409 2003年3月  

Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth 

APPLIED PHYSICS LETTERS 82(8) 1227-1229 2003年2月  

An approach to device grade amorphous and microcrystalline silicon thin films fabricated at higher deposition rates 

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE 6(5) 445-453 2002年10月  

Stress-induced nucleation of microcrystalline silicon from amorphous phase 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(5A) 2821-2828 2002年5月  

Device-grade amorphous silicon prepared by high-pressure plasma 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(4A) 1947-1951 2002年4月  

Depth profiling of silicon-hydrogen bonding modes in amorphous and microcrystalline Si : H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry 

JOURNAL OF APPLIED PHYSICS 91(7) 4181-4190 2002年4月