坂田 功

Back-surface-field effects at the heterojunctions between boron-doped p-type hydrogenated amorphous silicon and crystalline silicon in thin-film crystalline silicon solar cells 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44(10) 7332-7339 2005年10月  

Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate 

JOURNAL OF APPLIED PHYSICS 97(10) 103707-1-103707-6 2005年5月  

Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon 

JOURNAL OF APPLIED PHYSICS 96(12) 7532-7536 2004年12月  

Band lineup at the interface between boron-doped P-type hydrogenated amorphous silicon and crystalline silicon studied by internal photoemission 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43(7B) L954-L956 2004年7月  

Evolution of an amorphous silicon network from silicon paracrystallites studied by spectroscopic ellipsometry 

PHYSICAL REVIEW B 69(23) 235204-1-235204-5 2004年6月  

Post-transit photocurrent spectroscopy studies on the gap state distribution in hydrogenated amorphous silicon: Trap occupation problems in leaky junctions and high-defect-density samples 

JOURNAL OF APPLIED PHYSICS 94(5) 3185-3193 2003年9月  

Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE 

JOURNAL OF CRYSTAL GROWTH 250(1-2) 29-33 2003年3月  

Quinhydrone/methanol treatment for the measurement of carrier lifetime in silicon substrates 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41(8A) L870-L872 2002年8月  

Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing 

APPLIED PHYSICS LETTERS 80(22) 4115-4117 2002年6月  

Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films 

APPLIED PHYSICS LETTERS 80(7) 1159-1161 2002年2月  

Effects of visible light illumination during plasma enhanced chemical vapor deposition growth on the film properties of hydrogenated amorphous silicon 

JOURNAL OF APPLIED PHYSICS 91(2) 840-848 2002年1月  

Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films 

JOURNAL OF APPLIED PHYSICS 90(2) 1067-1069 2001年7月  

Relationship between carrier diffusion lengths and defect density in hydrogenated amorphous silicon 

Journal of Applied Physics 81(3) 1323-1330 1997年2月1日  

Deep defect states in hydrogenated amorphous silicon studied by a constant photocurrent method 

Journal of Applied Physics 71(9) 4344-4353 1992年