菅谷 武芳

Characteristics of 1.3 mu m quantum-dot lasers with high-density and high-uniformity quantum dots 

APPLIED PHYSICS LETTERS 89(17) 2006年10月  

Realization of 1.3 μm InAs quantum dots with high density, uniformity, and quality 

JOURNAL OF CRYSTAL GROWTH 295(2) 162-165 2006年10月  

Improved optical properties of InAs quantum dots grown with an As-2 source using molecular beam epitaxy 

JOURNAL OF APPLIED PHYSICS 100(6) 063107-1-063107-4 2006年9月  

InGaAs dual channel transistors with negative differential resistance 

APPLIED PHYSICS LETTERS 88(14) 142107-1-142107-3 2006年4月  

Pulse area control of exciton Rabi oscillation in InAs/GaAs single quantum dot 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45(4B) 3625-3628 2006年4月  

Highly sensitive InGaAs/InAIAs quantum wire photo-FET 

ELECTRONICS LETTERS 42(7) 413-414 2006年3月  

Electronic structures in single pair of InAs/GaAs coupled quantum dots with various interdot spacings 

JOURNAL OF APPLIED PHYSICS 99(3) 2006年2月  

1.3-mu m InAs quantum-dot laser with high dot density and high uniformity 

IEEE PHOTONICS TECHNOLOGY LETTERS 18(1-4) 619-621 2006年1月  

Negative differential resistance of InGaAs dual channel transistors 

Seventh International Conference on New Phenomena in Mesoscopic Structures and Fifth International Conference on Surfaces and Interfaces of Mesoscopic Devices, 2005 38 108-111 2006年  

Observation of exciton molecule consisting of two different excitons in coupled quantum dots 

APPLIED PHYSICS LETTERS 87(25) 253110-1-253110-3 2005年12月  

Observation of interdot correlation in single pair of electromagnetically coupled quantum dots 

APPLIED PHYSICS LETTERS 87(18) 182103-1-182103-3 2005年10月  

Characterization of the InGaAs/InAlAs HEMT transit output response by using an electro-optical sampling technique 

JOURNAL OF THE KOREAN PHYSICAL SOCIETY 47(3) 520-524 2005年9月  

1.3 mu m InAs quantum dots grown with an As-2 source using molecular-beam epitaxy 

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(3) 1243-1246 2005年5月  

Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs 

JOURNAL OF CRYSTAL GROWTH 278(1-4) 94-97 2005年5月  

Electronic structures and carrier correlation in single pair of coupled quantum dots 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44(4B) 2647-2651 2005年4月  

Observation of bonding states in single pair of coupled quantum dots using microspectroscopy 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44(4B) 2684-2687 2005年4月  

Enhanced peak-to-valley current ratio in InGaAs/InAlAs trench-type quantum-wire negative differential resistance field-effect transistors 

JOURNAL OF APPLIED PHYSICS 97(3) 034507-1-034507-5 2005年2月