篠原 啓介

Extremely high-speed lattice-matched InGaAs/InAlAs high electron mobility transistors with 472 GHz cutoff frequency 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41(4B) L437-L439 2002年4月  

Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411)A Superflat Interfaces Grown by Molecular Beam Epitaxy 

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 38(9) 5037-5039 1999年9月15日  

Recovery of (411)A superflat interfaces in GaAs/Al_0.3Ga_0.7As quantum wells grown on (411)A GaAs substrate by molecular beam epitaxy 

Jpn. J Appl. Phys. 38 (1999) 4715-4717 38(8) 4715-4717 1999年  

Recovery of (411)A Superflat Interfaces in GaAs/Al0.3Ga0.7As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy. 

Japanese Journal of Applied Physics 38(8) 4715-4717 1999年  

GaAs/Al0.4Ga0.6As triple barrier resonant tunneling diodes with (4 1 1)A super-flat interfaces grown by MBE 

Journal of Crystal Growth 201 773-777 1999年  

GaAs/AlAs resonant tunneling diodes with super-flat interfaces grown on (4 1 1)A GaAs substrates by MBE 

Journal of Crystal Growth 175-176(2) 924-929 1997年  

As4 pressure dependence of the interface flatness of GaAs/Al0.3Ga0.7 As quantum wells grown on (411) A GaAs substrates by MBE 

Applied Surface Science 113-114 73-78 1997年