MISC

2018年1月2日

Bragg grating coupled high Q factor ring resonator using LSCVD deposited Si3N4 film

22nd Microoptics Conference, MOC 2017
  • Xiaoyang Cheng
  • ,
  • Shiyoshi Yokoyama

2017-
開始ページ
96
終了ページ
97
記述言語
英語
掲載種別
DOI
10.23919/MOC.2017.8244509
出版者・発行元
Institute of Electrical and Electronics Engineers Inc.

High-quality Si3N4 films with low optical loss were deposited at 150°C using LSCVD. A micro-ring resonator based on as-deposited Si3N4 with Q-factor of 5.2×104 has been demonstrated. Bragg gratings are fabricated at bus ends to improve coupling efficiency. The LSCVD deposited Si3N4 exemplify its viability as a photonic integration platform.

リンク情報
DOI
https://doi.org/10.23919/MOC.2017.8244509
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85045831095&origin=inward
ID情報
  • DOI : 10.23919/MOC.2017.8244509
  • SCOPUS ID : 85045831095

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