2017年7月
Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film
OPTICAL MATERIALS EXPRESS
- ,
- ,
- ,
- 巻
- 7
- 号
- 7
- 開始ページ
- 2182
- 終了ページ
- 2187
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1364/OME.7.002182
- 出版者・発行元
- OPTICAL SOC AMER
High-quality silicon nitride (Si3N4) films with a low stress and optical loss were deposited at low temperature (150 degrees C) using liquid source chemical vapor deposition (LSCVD). The refractive index of the Si3N4 film was optimized by changing the composition ratio and deposition temperature. An integrated photonic structure of micro-ring resonator based on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as a photonic integration platform. Bragg gratings are fabricated at both ends of the bus waveguide to improve coupling efficiency and testing flexibility. A measured waveguide loss of 2.9 dB/cm and a high Q-factor of 5.2 x 10(4) are achieved. The LSCVD deposited Si3N4 is therefore a highly promising photonic integration platform for various integrated photonic applications. (C) 2017 Optical Society of America
- リンク情報
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- DOI
- https://doi.org/10.1364/OME.7.002182
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000404735600005&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85020392146&origin=inward
- ID情報
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- DOI : 10.1364/OME.7.002182
- ISSN : 2159-3930
- SCOPUS ID : 85020392146
- Web of Science ID : WOS:000404735600005