2009年12月
Correlations between antibunching and blinking of photoluminescence from a single CdSe quantum dot
EUROPEAN PHYSICAL JOURNAL D
- ,
- ,
- 巻
- 55
- 号
- 3
- 開始ページ
- 691
- 終了ページ
- 697
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1140/epjd/e2009-00266-6
- 出版者・発行元
- SPRINGER
The antibunching and blinking from a single CdSe/ZnS nanocrystal with an emission wavelength of 655 nm were investigated under different excitation powers. The decay process of the photoluminescence from nanocrystal was fitted into a stretched exponential, and the small lifetime and the small stretching exponent under a high excitation power were explained by using nonradiative multi-channel model. The probability of distributions for off-times from photoluminescence intermittence was fitted into the power law, and the power exponents were explained by using a tunneling model. For higher excitation power, the Auger-assisted tunneling model takes effect, where the tunneling rate increases and the observed lifetime decreases. For weak excitation power, the electron directly tunnels between the nanocrystal and trapping state without Auger assistance. The correlation between antibunching and blinking from the same nanocrystal was analyzed.
- リンク情報
-
- DOI
- https://doi.org/10.1140/epjd/e2009-00266-6
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000271939500018&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=71449093955&origin=inward
- ID情報
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- DOI : 10.1140/epjd/e2009-00266-6
- ISSN : 1434-6060
- SCOPUS ID : 71449093955
- Web of Science ID : WOS:000271939500018