KAMIYA Toshio

J-GLOBAL         Last updated: Mar 23, 2019 at 02:39
 
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Name
KAMIYA Toshio
Affiliation
Tokyo Institute of Technology
Section
Institute of Innovative Research
Job title
Professor
Degree
Doctor of Engineering(Tokyo Institute of Technology)
Research funding number
80233956

Research Areas

 
 

Academic & Professional Experience

 
1991
 - 
2002
:
 
2002
 - 
2003
:
 
2003
   
 
-:
 

Education

 
 
 - 
1991
Graduate School, Division of Humanities and Social Sciences, Tokyo Institute of Technology
 

Awards & Honors

 
2007
The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology, The Young Scientists' Prize
 

Misc

 
Takayoshi Katase , Hidenori Hiramatsu , Toshio Kamiya, and Hideo Hosono
Applied Physics Express   3 063101   2010
Tomomasa Shinozaki, Kenji Nomura, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono
Thin Solid Films   518 2996-2999   2010
Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, and Hideo Hosono
Appl. Phys. Lett.   96(14) 142507   2010
Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono
Thin Solid Films   518 3000-3003   2010
Kenji Nomura, Toshio Kamiya, Yutomo Kikuchi, Masahiro Hirano, Hideo Hosono
Thin Solid Films   518 3012-3016   2010

Books etc

 
Transparent Conductive Oxide Thin Films 2007
2008   
Chap. 4 Ceramics, in Hartree-Fock-Slater Method for Materials Science -The DV-X Alpha Method for Design and Characterization of Materials- (Eds. Hirohiko Adachi, Takeshi Mukoyama, Jun Kawai)
Springer   2005   
Control of bandgap and network structure in hydrogenated amorphous silicon
Recent Developments in Non-Crystalline Solids (Transworld Research Network, Kerala, India)   2002   
Room temperature single-electron effects in nanostructured silicon
FEMD News Letter   2001   
Carrier transport across a few grain boudnaries in polycrystallien silicon
FEMD News Letter   2001   

Conference Activities & Talks

 
Impact of Subgap States on Peculiar Characteristics of Amorphous Oxide Thin-Film Transistor
Proc. IDW'09   2009   
Electronic structures of defects and impurities in layered mixed anion compounds
Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics   2009   
Defects and doping in amorphous oxide semiconductor studied by first-principles calculations
Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics   2009   
Amorphous oxide semiconductor: Factors determining TFT performance and stability
9th Int. Meeting on Inf. Display (IMID2009)   2009   
What have been clarified for amorphous oxide semiconductors?
IDMC窶「3DSA窶「Asia Display'09   2009   

Association Memberships

 
 

Works

 
CREST, "Neosilicon: A Novel Functional Material for Future Electronics"
Artistic Activity   1999 - 2002

Research Grants & Projects

 
semiconductor
Project Year: 2002 - 2002
Calculation of Properties by ab-initio method
nanodevice
Project Year: 2004