2007年7月
InP/InGaAs hot electron transistors with insulated gate
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
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- 巻
- 46
- 号
- 25-28
- 開始ページ
- L617
- 終了ページ
- L619
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JJAP.46.L617
- 出版者・発行元
- INST PURE APPLIED PHYSICS
Elimination of the base layer in conventional hot electron transistor has possibility to minimize the scattering in the propagation. In previous study, we fabricated InP/InGaAs hot electron transistors without a doped layer in the propagation region by fabricating a 25-nm-wide emitter and Schottky gate electrodes located at both sides of an emitter mesa. However, there were some problems in fabricated device. To solve these observed problems, we proposed and fabricated a new structure with hot electrons propagating only in the intrinsic semiconductor. An insulated gate was introduced in hot electron transistors, in which hot electrons are propagated only in the intrinsic region after extraction from a heterostructure launcher. Clear collector current modulation by the insulated gate and a current density of 160kA/cm(2) were confirmed.
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.46.L617
- ISSN : 0021-4922
- Web of Science ID : WOS:000248427200007