In this study, we present the fabrication and characterization of InGaSb/AlSb p-channel high-hole-mobility-transistor devices using inductively coupled plasma (ICP) etching with BCl3 gas. Devices fabricated by the dry etching technique show good DC and RF performances. Radio-frequency (RF) performance for devices with different source-to-drain spacing (L-SD) and gate length (L-g) were investigated. The fabricated 80-nm-gate-length p-channel device with 2-mu m LSD exhibited a maximum drain current of 86.2mA/mm with peak transconductance (g(m)) of 64.5mS/mm. The current gain cutoff frequency (f(T)) was measured to be 15.8 GHz when the device was biased at V-DS = -1.2 V and V-GS = 0.4 V. (C) 2013 The Japan Society of Applied Physics