論文

査読有り
2012年8月

Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process

IEICE TRANSACTIONS ON ELECTRONICS
  • Yutaro Yamaguchi
  • ,
  • Takeshi Sagai
  • ,
  • Yasuyuki Miyamoto

E95C
8
開始ページ
1323
終了ページ
1326
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1587/transele.E95.C.1323
出版者・発行元
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG

With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3 mA/mu m(2) were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after deembedding, a cutoff frequency (f(T)) of 510 GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed f(T) was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate.

リンク情報
DOI
https://doi.org/10.1587/transele.E95.C.1323
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000308261200004&DestApp=WOS_CPL
ID情報
  • DOI : 10.1587/transele.E95.C.1323
  • ISSN : 0916-8524
  • eISSN : 1745-1353
  • Web of Science ID : WOS:000308261200004

エクスポート
BibTeX RIS