2012年8月
Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
IEICE TRANSACTIONS ON ELECTRONICS
- ,
- ,
- 巻
- E95C
- 号
- 8
- 開始ページ
- 1323
- 終了ページ
- 1326
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1587/transele.E95.C.1323
- 出版者・発行元
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3 mA/mu m(2) were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after deembedding, a cutoff frequency (f(T)) of 510 GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed f(T) was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate.
- リンク情報
- ID情報
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- DOI : 10.1587/transele.E95.C.1323
- ISSN : 0916-8524
- eISSN : 1745-1353
- Web of Science ID : WOS:000308261200004