2011年
High drain current (> 2A/mm) InGaAs channel MOSFET at V-D=0.5V with shrinkage of channel length by InP anisotropic etching
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
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- 記述言語
- 英語
- 掲載種別
- 研究論文（国際会議プロシーディングス）
- DOI
- 10.1109/IEDM.2011.6131545
- 出版者・発行元
- IEEE
In this paper, we report InGaAs channel MOSFETs with an InP source contact. InP source contact enables the suppression of carrier starvation and the easy shrinkage of the channel length by anisotropic etching. In fabricated 50-nm InGaAs channel MOSFETs, I-D = 2.4A/mm at V-D=0.5V were observed. On the other hand, degradations of V-th and SS by the short channel effect were also observed. Thinner channels will be required in order to suppress this effect.
- リンク情報
- ID情報
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- DOI : 10.1109/IEDM.2011.6131545
- Web of Science ID : WOS:000300015300077