2009年
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7
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- 巻
- 25
- 号
- 6
- 開始ページ
- 87
- 終了ページ
- 92
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1149/1.3206609
- 出版者・発行元
- ELECTROCHEMICAL SOC INC
The performance of n-type metal-oxide-semiconductor HEMTs with an InAs-channel using atomic-layer-deposited Al2O3 as gate dielectric has been fabricated and evaluated. The device performances of a set of scaled transistors with different gate dielectric thicknesses of 3, 5 and 7 nm have been investigated to determine whether the architecture of Al2O3 dielectric on InAs-channel HEMT can demonstrate good properties at low bias conditions for high-speed, high performance CMOS applications. The results indicate that the high-performance InAs-channel MOS-HEMTs with an ALD Al2O3 gate dielectric are promising candidates for advanced post-Si CMOS applications.
- リンク情報
- ID情報
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- DOI : 10.1149/1.3206609
- ISSN : 1938-5862
- Web of Science ID : WOS:000338086300008