高橋 清

リアルタイムビジョンを用いた物体認識とそのビデオ会議システムへの応用 山本庸ニ、高橋 清 

ロボット学会シンポジウム 3月 箱根 2004年  

Effect of GaN template on atomic-layer-epitaxy growth of Zno K. Saito, K. Nakayama, Y. Hosokai, K. Ishida, K. Takahashi 

Phys. stst. sol.(c) 1, No. 4, pp. 969-972 2004年  

Thick cubic GaN film grown using ultla-thin low temperature buffer layer by RF-MBE R. Kimura, T. Suzuki, M. Ouchi, K. Ishida, K. Takahashi 

The 13th Int. Conf. On Molecular Beam Epitaxy, Edinburgh, Scotland August 24-27 2004年  

Three-step method for growth of high-quality GaN on sapphire substretes by mass-production metalor ganic vapor phase epitaxy S. Nitta, Y. Ban, K. Takahashi 

12th Int. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE-Ⅻ) May 30-June 4 Hawaii 2004年  

MOVPE growth of nitrogen-doped p-type ZnO K.Saito, K.Nagayama, Y.Hosokai, K. Ishida, K.Takahashi, M.Konagai 

12th Int. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE-Ⅻ) , May 30-June 4 Hawaii 2004年  

Investigation of effect of nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by RF-MBE J. Shike, A. Shigemori, M. Ouchi, N. Tanaka, K.Ishida, K.Takahashi, R. Kimura 

The 5th Int. Symp. on Blue Laser and Light Emitting Diodes, March, Korea Pa09, 15-19 2004年  

Development of robot system in distance-learning for hospitalized children Y. Yamamoto, K. Takahashi 

日本ロボット学会 第21回学術講演会 2003年  

Improvement of the crystal quality of ZnO thin films grown by atomic layer epitaxy by using GaN template K. Saito, K. Nagayama, Y. Hosokai, K. Ishida, K. Takahashi 

11th Int. Conf. on Ⅱ-Ⅵ Compound Semiconductor Sept. 22-26, New York 2003年  

Characterization of cubic GaN films using an AIN/GaN ordered alloy on GaAs (100) by RF-MBE 

Mat. Res. Soc. Symp. 743 175-180 2003年  

Development of robot system in distance-learning for hospitalized children 

日本ロボット学会 第21回学術講演会 2003年  

Characterrization of cubic GaN films using an AIN/GaN ordered alloy on GaAs(100) by RF-MBE J. Shike, A. Shigemori, K. Ishida, K.Takahashi, R.Kimura 

Mat. Res. Soc. Symp Vol. 743, pp. 175-180 2003年  

Microelectronics for the 21st Century-Towrds the Realization of Quantum Effect Devices- 

The 18th Forum of Science and Technology of Fluctutions, Nov.29 Tokyo pp. 55-58 2003年  

Can quantum mechanical description of physical reality be considered complete? 

10th International Symposium on Quantum Effect Electronics, Nov.27 Tokyo 1 2003年  

Improvement of the crystal quality of ZnO thin films grown by atomic layer epitaxy by using GaN template K. Saito, K. Nagayama, Y. Hosokai, K. Ishida, K. Takahashi 

11th Int. Conf. on Ⅱ-Ⅵ Compound Semiconductor Sept. 22-26, New York 2003年  

Characterization of cubic GaN films using an AIN/GaN ordered alloy on GaAs (100) by RF-MBE 

Mat. Res. Soc. Symp. 743 175-180 2003年  

AIN/GaN規則混晶層を用いた立方晶GaN薄膜のGaAs(100)基板上へのMBE成長 

電子情報通信学会、信学技報 73-76 2002年6月  

Cubic CaN film growth using AIN/GaN ordered alloyby RF plasma-assisted molecular beam epitaxy 

Phys. Stat. Sol. (c) (1) 170-174 2002年  

Atomic layer epitaxy of ZnO thin films on GaN templates 

12"Int. Conf. on Thin Films(ICTF12), (Slovakia), Sept. 15-20(2002) 2002年  

Ga and N doping in ZnO by atomic layer growth techniqui 

4th Int. Symp. on BlueLaseer and Light Emitting Diodes, TuP12, Cordoba(Spain), 11-15 March(2002) 2002年  

Atomic layer growsth of ZnO thin films using diethylzinc and water 

4th Japanese-Spanish-German Workshop, 16 2002年