1996年
Nano-scale resolved detection of photo-current in a-Si:H films
AMORPHOUS SILICON TECHNOLOGY - 1996
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- 巻
- 420
- 号
- 開始ページ
- 895
- 終了ページ
- 900
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1557/proc-420-895
- 出版者・発行元
- MATERIALS RESEARCH SOCIETY
The growth mode of a-Si:H plasma CVD film was observed by AFM to range from homogeneous deposition to heterogeneous island formation depending on the substrate material and deposition temperature. The correlation between the grain-like structure and electric property of the film deposited on transparent conductive SnO2, substrates has been elucidated by using an AFM with a conductive cantilever. The local distribution of photo-current in the a-Si:H films was found to agree well with the topographic image; the photo-current around the grain boundaries was lower than that on the grains. The effect of surface treatment with an aqueous HF solution indicates that the imhomogeneity in the photo-current originates from the preferential oxidation around the grain boundaries rather than intrinsic electric property.
- リンク情報
- ID情報
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- DOI : 10.1557/proc-420-895
- ISSN : 0272-9172
- ORCIDのPut Code : 45334359
- Web of Science ID : WOS:A1996BH07P00141