2006年
SiCx alloy films deposited by hot-wire CVD using SiH3CH3 as carbon sauce
CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2
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- 巻
- 2
- 号
- 開始ページ
- 1628
- 終了ページ
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- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1109/WCPEC.2006.279799
- 出版者・発行元
- IEEE
The hetero-structured SiCX films have been deposited by hot-wire CVD using SiH3CH3 as carbon source gas. Although the carbon source gas ratio and filament temperature in the deposition using SiH3CH3 were smaller than those using C2H6, the carbon content in the SiH3CH3 sample was almost the same as that in the C2H6 sample. The optical energy gap in the SiH3CH3 sample was larger than that in the C2H6 sample. The SiH3CH3 sample deposited under the optimized deposition condition showed wide optical energy gap of 1.99 eV and large dark conductivity of 15.1 S/cm.
- リンク情報
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- DOI
- https://doi.org/10.1109/WCPEC.2006.279799
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000241251601094&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=41749124525&origin=inward
- ID情報
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- DOI : 10.1109/WCPEC.2006.279799
- Web of Science ID : WOS:000241251601094