2015年8月
Electrical characterization of hydrogenated amorphous silicon oxide films
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 54
- 号
- 8
- 開始ページ
- 08KB11-1
- 終了ページ
- 08KB11-5
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/JJAP.54.08KB11
- 出版者・発行元
- IOP PUBLISHING LTD
The electrical characterization of hydrogenated amorphous silicon oxide (a-SiOx:H) films was performed by electron spin resonance (ESR) and electrical conductivity measurements. In the ESR spectra of the a-SiOx:H films, two ESR peaks with g-values of 2.005 and 2.013 were observed. The ESR peak with the g-value of 2.013 was not observed in the ESR spectra of a-Si:H films. The photoconductivity of the a-SiOx:H films decreased with increasing spin density estimated from the ESR peak with the g-value of 2.005. On the other hand, photoconductivity was independent of spin density estimated from the ESR peak with the g-value of 2.013. The optical absorption coefficient spectra of the a-SiOx:H films were also measured. The spin density estimated from the ESR peak with the g-value of 2.005 increased proportionally with increasing optical absorption owing to the gap-state defect. (C) 2015 The Japan Society of Applied Physics
- リンク情報
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- DOI
- https://doi.org/10.7567/JJAP.54.08KB11
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000358662900025&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84938515577&origin=inward
- ID情報
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- DOI : 10.7567/JJAP.54.08KB11
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000358662900025