木村 雅和

静電誘導デバイス 

電子材料 137(5) 98-103 1998年1月  

Rapid diffusion of V elements during the conversion of GaAs to GaAsP on a GaP substrate 

Applied Surface Science 113-114 567-572 1997年  

A solid-liquid diffusion model for growth and dissolution of ternary alloys by liquid phase epitaxy 

JOURNAL OF CRYSTAL GROWTH 158(3) 231-240 1996年1月  

Liquid phase epitaxy of GaAs by yo-yo solute feeding method 

Proceedings of International Symposium on Surfaces and Thin Films of Electronic Materials(Bull. Res. Inst. Electron. Shizuoka University) 30(3) 77-80 1996年1月  

A solid-liquid diffusion modlfor rowt adissolution of III-V semiconductor aloy crytals by LPEI 

Bulletin of the Research Institute of Electronics, Shizuoka University 30(2) 105-118 1996年1月  

Growth of GaAsP alloy layer on GaP substrate by compositional conversion technique 

Reports of The Graduate School of Electronic Science and Technology, Shizuoka University 17 43-48 1996年1月  

Growth of GaAsP on GaP by compositional conversion 

Proceedings of International Symposium on Surfaces and Thin Films of Electronic Materials(Bull. Res. Inst. Electron. , Shizuoka University) 30(3) 81-84 1996年1月  

LPE growth of GaAs by yo-yo solute feeding method 

Journal of Crystal Growth 160(3-4) 229-234 1996年  

組成変換技術によるGaP基板上へのGaAsP混晶層の成長 

静岡大学大学院電子科学研究科研究報告 17 43-48 1996年1月  

LPE法によるIII-V族化合物半導体混晶の成長および溶解に関するSolid-Liquid Diffision Modelによる解析I 

静岡大学電子工学研究所研究報告 30(2) 105-118 1996年1月  

Formation of zinc blende GaN using conversion technique(B2-3) 

2nd International Symposium on Control of Semiconductor Interfaces 22 1996年1月  

Diffusion mass transport in solution growth of semiconductors 

Proc. First Trabzon International Energy and Environment sysposium 2 609-614 1996年1月  

Gravity effect on dissolution and growth of GaSb by liquid phase epitaxy 

The Tenth American Conference on Crystal Growth, in conjunction with The Ninth International Conference on Vapor Growth & Epitaxy 46 1996年1月  

Conversion of GaAs to GaN on GaP substrate by annealing in NH3 flow 

The Tenth American Conference on Crystal Growth, in conjunction with The Ninth International Conference on Vapor Growth & Epitaxy 71 1996年1月  

Gravity effect on LPE growht of GaSb(G22) 

15th Electronic Materials Symposium 231-232 1996年1月  

GaSb crystals pulled from non-stoichiometric solution at constant temperature(G21) 

15th Electronic Materials Symposium 227-230 1996年1月  

Conversion mechanism of GaAs to GaAsP on GaP substrate 

Third International Wrokshop Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 1-4 1996年1月  

Suppression of twins in GaAs layers grown on a GaP(111)B substrate by liquid phase epitaxy 

Journal of Crystal Growth 169(1) 181-184 1996年  

Liquid phase epitaxy of silicon: An experimental and numerical parametric study 

Journal of Crystal Growth 167(3-4) 516-524 1996年