- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
We have established the new method of fabricating high-J(c) YBa2Cu3O7-x (YBCO) nanobridges with high reproducibility. Nanobridges ranging in 30-400 nm wide were formed by using electron beam lithography. An ultra thin film of 2-3 nm-thick insulative YBCO was deposited after nanobridge formation for recovering the damaged films occurred in the process. The critical current density J(c) was approximately 620 MA/cm(2) at 4.2 K in a width of 30 nm bridges, and increased by about two orders of magnitude in the different widths of J(c). The critical temperature T-c was 87 K, about the same as T-c of the film. The current-voltage characteristics showed a different curve from the conventional flux-flow type as the widths have been narrowed. Nanobridges developed in this study are expected to the applications for nano-SQUIDs or the optical input/output interfaces in single-flux-quantum circuits.
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- DOI : 10.1109/TASC.2009.2018189
- ISSN : 1051-8223
- Web of Science ID : WOS:000268282000013